Globalwafers Co., Ltd.

Memc Singapore Pte. Ltd.

Memc Singapore Pte. Ltd. (uen200614794d)

Corner Star Limited

Benjamin Michael Meyer

William L Luter

Lee William Ferry

Justin Scott Kayser

Sumeet S Bhagavat

Gaurab Samanta

Soubir Basak

John Francis Valley

Parthiv Daggolu

James Dean Eoff

Vandan Tanna

Carissima Marie Hudson

Steven Lawrence Kimbel

JaeWoo Ryu

Eric Michael Gitlin

Rituraj Nandan

Jae Woo Ryu

Jiaying Ke

Hariprasad Sreedharamurthy

Salvador Zepeda

Chun-Sheng Wu

Feng-Chien Tsai

Nan Zhang

Chen-Yi Lin

Hong-Huei Huang

Wei-Chen Chou

Steven John Ferguson

Jaewoo Ryu

Junhwan Ji

Woojin Yun

A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.

Single crystal growth susceptor assembly with sacrifice ring

A method of detecting defects on a semiconductor wafer includes directing diffuse light to the semiconductor wafer and reflecting the diffuse light off of the semiconductor wafer. The method further includes detecting the diffuse light with a camera to generate an image of the semiconductor wafer and analyzing the image to detect defects on the semiconductor wafer.

Method of processing a cleaved semiconductor wafer

Cooling jacket devices of ingot puller apparatus used to prepare silicon ingots by the Czochralski method are disclosed. The cooling jacket device may include an inner shell that forms an inner chamber through which the ingot is pulled. The cooling jacket includes an outer shell. A plurality of tubes are disposed between the inner shell and outer shell. Each tube forms a cooling fluid passageway through which cooling fluid passes.

Ingot puller apparatus having cooling jacket device with cooling fluid tubes

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

Ingot puller apparatus having heat shields with feet having an apex

A semiconductor wafer processing system for processing a semiconductor wafer includes a semiconductor wafer processing station for processing the semiconductor wafer and a semiconductor wafer imaging system that images the semiconductor wafer after the semiconductor wafer processing station processes the semiconductor wafer. The semiconductor wafer imaging system includes shroud panels defining a black box, a camera positioned in the black box for imaging the semiconductor wafer, and an illumination panel for directing diffuse light to the semiconductor wafer. A portion of the diffuse light is reflected off the semiconductor wafer and the camera images the semiconductor wafer by detecting the reflected diffuse light.

Cleaved semiconductor wafer imaging system

A semiconductor wafer imaging system for imaging a semiconductor wafer includes shroud panels defining a black box, a camera positioned in the black box for imaging the semiconductor wafer, and an illumination panel for directing diffuse light to the semiconductor wafer. A portion of the diffuse light is reflected off the semiconductor wafer and the camera images the semiconductor wafer by detecting the reflected diffuse light.

Cleaved semiconductor wafer camera system

Ingot puller apparatus having heat shields with voids therein

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

Crystal pulling systems for growing monocrystalline ingots from a melt of semiconductor or solar-grade material are described. The crystal pulling systems include seed chuck assemblies designed to reduce formation of deposits on components of the crystal pulling systems by reducing and inhibiting the formation of gas flow recirculation cells within the crystal pulling systems.

Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process

A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.

Crystal puller for inhibiting melt contamination

Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.

Methods of adjusting insulation in a directional solidification furnace

A directional solidification furnace includes one or more movable cooling plates disposed beneath a crucible. In a first position, the cooling plates are free from contact with a crucible support positioned adjacent the crucible. In a second position, the cooling plates are in contact with the crucible support. A control system is used to control the amount of force exerted by the cooling plates against the crucible.

Directional solidification furnace having movable heat exchangers

A heat exchanger system for use in a directional solidification furnace is disclosed. The heat exchanger includes a plate having a flow path formed in the plate for directing a flow of coolant. The flow path has an inlet positioned adjacent an outlet. A wall separates the inlet and the outlet of the flow path. The heat exchanger includes a cover having an opening in fluid communication with the inlet and the outlet of the flow path. An inner conduit is connected to the inlet of the flow path and an outer conduit is connected to the outlet of the flow path.

Directional solidification furnace heat exchanger

Method of adjusting insulation in a directional solidification furnace

Growing community of inventors

Defiance, MO, United States of America

Benjamin Michael Meyer