Google Inc.

Glo Ab

Nanosys, Inc.

Benjamin Leung

Miao-Chan Tsai

Fariba Danesh

Richard P Schneider, Jr

Jiang Zhu

Tsun Yin Lau

Richard Peter Schneider, Jr

Zulal Tezcan Ozel

Gang He

Michael Joseph Cich

Max Batres

Sheila Hurtt

Zulal Tezcan

Richard P Schneider Jr

The disclosure describes various aspects of strain management layers for light emitting elements such as light-emitting diodes (LEDs). The present disclosure describes an LED structure formed on a substrate and having a strain management region supported on the substrate, and an active region configured to provide a light emission associated with the LED structure. The strain management region includes a first layer including a superlattice having a plurality of repeated first and second sublayers, and a second layer including a bulk layer. In an embodiment, at least one of the first and second sublayers and the bulk layer includes a composition of InAlGaN. A device having multiple LED structures and a method of making the LED structure are also described.

Combination of strain management layers for light emitting elements

The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

Light-emitting diodes with integrated optical elements

A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.

Quantum well-based LED structure enhanced with sidewall hole injection

A growth mask layer is formed over a semiconductor material layer on a substrate. Optionally, a patterned hard mask layer can be formed over the growth mask layer. A nano-imprint lithography (NIL) resist layer is applied, and is imprinted with a pattern of recesses by stamping. The pattern in the NIL resist layer through the growth mask layer to provide a patterned growth mask layer with clusters of openings therein. If a patterned hard mask layer is employed, the patterned hard mask can prevent transfer of the pattern in the area covered by the patterned hard mask layer. Semiconductor material portions, such as nanowires can be formed in a cluster configuration through the clusters of openings in the patterned growth mask layer. Alignment marks can be formed concurrently with formation of semiconductor material portions by employing nano-imprint lithography.

Method of making a semiconductor device using nano-imprint lithography for formation of a selective growth mask

A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

Light emitting diodes formed on nanodisk substrates and methods of making the same

A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Etendue enhancement for light emitting diode subpixels

Techniques and mechanisms to provide wireless communication with a body-mountable device comprising a single-loop antenna. In an embodiment, distal ends of the single-loop antenna are disposed on opposite sides of a slit structure, wherein the single-loop antenna extends around a controller configured to provide any of multiple modes of high-frequency communication with the single-loop antenna. Different operational modes each provide for operation of the single-loop antenna with both a proximity-coupled feed structure and a first contact at or near a distal end of the single-loop antenna. In another embodiment, the single-loop antenna forms a hole or a recess structure which is aligned with a sensor or an input/output (I/O) mechanism of the body-mountable device.

Body-mountable device with antenna forming external sidewall

A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.

Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof

Body-mountable device to provide radio-frequency wireless communication

A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.

Growing community of inventors

Sunnyvale, CA, United States of America

Benjamin Leung