Inpria Corporation

Hewlett-packard Development Company, L.p.

Oregon State University

Benjamin L Clark

Dominick Smiddy

Kai Jiang

Stephen T Meyers

Brian J Cardineau

Craig M Gates

Mark Geniza

Jeremy T Anderson

Alan J Telecky

Lauren B McQuade

Margaret Wilson-Moses

Mollie Waller

Gregory Scott Herman

Mohammed Saad Shaarawi

Peter Mardilovich

David A Champion

Douglas A Keszler

Jeffrey Allen Nielsen

Zhizhang Chen

Manish Giri

Jeremy Harlan Donaldson

Joseph Burton Edson

Bradley D Chung

Sadiq Bengali

Andrew F Phillips

James O'Neil

Sean P McClelland

John F Wager, Iii

Debora J Thomas

Peter De Schepper

Joe E Stout

Thomas J Lamkin

Mark Sanders Taylor

Dong Li

Jan Doise

Shu-Hao L Chang

Paul D Keir

Jeremy Hartan Donaldson

Gaetano Giordano

Emmet Whittaker

Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.

Stable solutions of monoalkyl tin alkoxides and their hydrolysis and condensation products

In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

Organometallic radiation patternable coatings with low defectivity and corresponding methods

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods

Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods

Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

Apparatuses for reducing metal residue in edge bead region from metal-containing resists

Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

Methods of reducing metal residue in edge bead region from metal-containing resists

The present invention is embodied in a method for precisely dispensing fluid, including treating an orifice of a fluid dispensing apparatus during a fabrication process by applying a low surface energy material layer onto the orifice, adjusting a thickness of the low surface energy material coating to a predetermined threshold and limiting backpressure of a low dead volume fluid delivery system coupled to the orifice to reduce interference or interruptions for precisely dispensing the fluid.

Fluid dispenser with low surface energy orifice layer for precise fluid dispensing

A print head () includes a layer () which at least partially forms firing chambers () and ribs () in contact with opposing side walls of a fluid feed slot () while extending from a first side wall to a second opposite side wall within the fluid feed slot ().

Printhead feed slot ribs

A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.

Microelectronic device

A fluid ejector device, including: a fluid nozzle layer defining an orifice therein; and at least one epoxy resin layer established on the nozzle layer, the at least one epoxy resin layer having first and second opposed surfaces with a thickness there between and a fluorine gradient formed therein such that the gradient extends into at least a portion of the thickness of the at least one epoxy resin layer, wherein an amount of a fluorinated species present in the at least one epoxy resin layer at the first opposed surface is greater than an amount of the fluorinated species present in the at least one epoxy resin layer at the second opposed surface that is adjacent the fluid nozzle layer.

Fluid ejector device

Various embodiments and methods relating to an ultra-violet radiation absorbing grid for attenuating transmission of near UV-light are disclosed.

Ultra-violet radiation absorbing grid

Growing community of inventors

Corvallis, OR, United States of America

Benjamin L Clark