Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Covestro Deutschland Ag

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Benjamin Krummacher

Florian Schindler

Markus Heinrich Klein

Karsten Diekmann

Norwin Von Malm

Erwin Lang

Simon Schicktanz

Christian Kristukat

Homer Antoniadis

Heinz Pudleiner

Frank Jermann

Klaus Meyer

Martin Zachau

Britta Goeoetz

Andrew Ingle

Kilian Regau

Michael Popp

Mathew Mathai

Thomas Dobbertin

Dirk Berben

Vi-En Choong

Martin Wittmann

Karsten Heuser

Franky So

Nina Riegel

Tilman Schlenker

Daniel Steffen Setz

Ulrich Niedermeier

Richard Baisl

Johannes Rosenberger

Dirk Becker

Jörg Frischeisen

Christian Schmid

Wencheng Su

Thorsten Vehoff

Norbert Danz

Joerg Farrnbacher

Steven Rossbach

Stelios A Choulis

Christoph Kefes

Egbert Hoefling

Egbert Höfling

Jörg Farrnbacher

Stefan Dechand

Doreen Heppner

Christoph Gärditz

Wolfgang Brütting

Michael Flämmich

Stefan Gschlöβl

Manfred Url

Stelios Choulis

Antoniadis Homer

The present invention relates to an organic radiation-emitting component with an active organic layer constituted to generate radiation and one or two radiation-output sides, characterised in that, on at least one radiation-output side of the component, a UV protective film is arranged and connected to the component, wherein the UV protective film contains at least one first layer (A) and a second layer (B), wherein the first layer (A) contains 0.01 to 20% by weight, with reference to the total weight of the first layer (A), of a UV absorber, and wherein the second layer (B) contains polycarbonate. Furthermore, the invention relates to the use of a component according to the invention as an organic light-emitting diode, and for lighting, especially for general lighting.

UV-protected component for OLEDs

A method is specified for production of an insulator layer. This method comprises the following process steps: A) providing a precursor comprising a mixture of a first, a second and a third component where&#x2014;the first component comprises a compound of the general  

Process for producing an insulator layer, process for producing an organic optoelectronic component comprising an insulator layer and organic optoelectronic component comprising an insulator layer

Various embodiments may relate to an optoelectronic component, including an optically active region formed for taking up and/or for providing electromagnetic radiation, at least one first contact structure, wherein the optically active region is electrically conductively coupled to the first contact structure, and an encapsulation structure with a second contact structure, wherein the encapsulation structure is formed on or above the optically active region and the first contact structure, and an electrically conductive structure formed for electrically conductively connecting the first contact structure to the second contact structure, wherein the encapsulation structure is at least partly formed by an electrically insulating molding compound, wherein the electrically insulating molding compound at least partly surrounds the electrically conductive structure.

Optoelectronic component and method for producing an optoelectronic component

A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer.

Radiation-emitting organic-electronic device and method for the production thereof

An organic light-emitting device includes at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Organic light-emitting device

The invention relates to an optoelectronic component with a first substrate, a second substrate, a functional layer stack, a lateral first recess and a first contact surface, the layer stack being arranged between the first substrate and the second substrate. Said layer stack comprises an organically active area for producing electromagnetic radiation, and the component has a first lateral surface. The first recess extends in the lateral direction to the first lateral surface and in the vertical direction through the second substrate.

Optoelectronic element

In at least one embodiment, a light panel system includes a system carrier with a carrier front face. Multiple organic light emitting diodes are arranged in a uniform grid on the carrier front face. An electronics driver is fitted to or in the system carrier. The light panel system can be handled and mounted as a single unit.

Light panel system

A method of operating an organic light-emitting component having first and second electrodes that have arranged between them an organic functional layer stack having at least one organic light-emitting layer that, during operation, produces light emitted via a luminous area, the first and second electrodes and the organic functional layer stack are in an extensive form, in contact with the first electrode, at each of two opposite edges of the first electrode a respective conductor track is arranged that extends in a longitudinal direction along the respective edge, the two conductor tracks have contact made with them on a same side of the first electrode by a connection element so that during operation there is a voltage drop in each conductor track in the longitudinal direction, which voltage drop brings about a luminous density gradient on the luminous area in a direction following the longitudinal direction.

Method of operating an organic light-emitting component

A dimming mirror device has a substrate having an electrochromic material that has a controllable transparency. At least one organic optoelectronic element, which has an organically functional layer stack, is arranged on the substrate. This element has at least one organic optoelectronic layer between two electrodes. The layer detects, in a first operational state of the mirror device, ambient light through the substrate such that the organic optoelectronic element acts, in the first operational state, as an element detecting organic light. The transparency of the substrate can be controlled in the first operational state in accordance with a measurement signal from the organic optoelectronic element.

Dimmable mirror device

A radiation-emitting device having an organic radiation-emitting functional layer and a radiation decoupling layer. The organic radiation-emitting functional layer emits a primary radiation; the radiation decoupling layer is disposed in the beam path of the primary radiation. On the side remote from the radiation-emitting functional layer the radiation decoupling layer comprises a microstructure having regularly disposed geometric structural elements; at least partial regions of the radiation decoupling layer contain regions which effect scattering of the primary radiation.

Radiation emitting device

Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material.

Organic light-emitting device having a matrix material embedded with heat conducting particles

In at least one embodiment, a light-emitting diode includes a carrier and an organic layer sequence with an active layer. A mirror layer and electrical contact regions are located on a connection side of the carrier. The contact regions are provided for electrically contacting the organic layer sequence. Electrical dummy regions are located on the connection side. The dummy regions are electrically insulated from the contact regions. The mirror layer is present in the dummy regions and in the contact regions. At least two of the dummy regions are arranged in such a way that base areas of these dummy regions cannot be congruently superimposed merely by arbitrary rotation of the carrier relative to a center axis of the carrier perpendicular to the connection side.

Organic light-emitting diode and device comprising an organic light-emitting diode

An optoelectronic device comprising: a first electrical supply conductor (); a second electrical supply conductor () which is connected to a first electrical terminal (); and a functional layer () for emitting radiation arranged between the first electrical supply conductor () and the second electrical supply conductor (), the second electrical supply conductor () having a lateral first electrical conductivity which changes monotonically over the extent of the second electrical supply conductor () away from the first electrical terminal ().

Optoelectronic device with homogeneous light intensity

An encapsulation structure for an optoelectronic component, may include: a thin-film encapsulation for protecting the optoelectronic component against chemical impurities; an adhesive layer formed on the thin-film encapsulation; and a cover layer formed on the adhesive layer and serving for protecting the thin-film encapsulation and/or the optoelectronic component against mechanical damage, wherein the adhesive layer is formed such that particle impurities situated at the surface of the thin-film encapsulation are at least partly enclosed by the adhesive layer.

Encapsulation structure for an opto-electronic component

In at least one embodiment of the semiconductor light source (), the latter comprises at least two planar elements (). The planar elements () each contain a semiconductor material for producing ultraviolet or visible radiation (R) when the semiconductor light source () is in operation. The radiation (R) is in this case emitted at precisely one major face () of the planar elements (). The reflectivity of the planar elements () for visible radiation, when the semiconductor light source () is not in operation, amounts to at least 80%. The planar elements () furthermore exhibit an average diameter (L) of at least 10 mm. Furthermore the major faces () of the planar elements () are arranged at an angle (&#x3b1;) to one another and facing one another. The angle (&#x3b1;) between the major faces () amounts in this case to between 30&#xb0; and 120&#xb0; inclusive.

Semiconductor light source

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Wuppertal, Germany

Benjamin Krummacher