Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Applied Materials Israel Limited

Technische Universiteit Delft

Benjamin John Cook

Dieter Winkler

Jürgen Frosien

Roman Barday

Stefan Lanio

Thomas Kemen

Ralf Schmid

Matthias Firnkes

Pieter Kruit

Ron Naftali

Eoin Horgan

Markus Thomann

Bernd Woellert

A charged particle beam device for irradiating or inspecting a specimen is described. The charged particle beam device includes a charged particle beam source for generating a primary charged particle beam and a multi-aperture lens plate having a plurality of apertures for forming four or more primary. Two or more electrodes having one opening, e.g. having one opening each, for the primary charged particle beam or the four or more primary beamlets are provided. The charged particle beam device further includes a collimator for deflecting a first primary beamlet, a second primary beamlet, a third primary beamlet, and a fourth primary beamlet of the four or more primary beamlets with respect to each other. The charged particle beam device further includes an objective lens unit having three or more electrodes, each electrode having openings for the four or more primary beamlets.

Method for inspecting a specimen and charged particle beam device

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

Charged particle beam manipulation device and method for manipulating charged particle beamlets

A method of influencing a charged particle beam () propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam () through at least one opening () of a multipole device () that comprises a first multipole () with four or more first electrodes () and a second multipole () with four or more second electrodes () arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device () with a first multipole () and a second multipole () provided on the same substrate as well as a charged particle beam apparatus () with a multipole device () are provided.

Method of influencing a charged particle beam, multipole device, and charged particle beam apparatus

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter () for generating a charged particle beam () propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (), including a first multi-aperture electrode () with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode () with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles () for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly () is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens () for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens () for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

Charged particle beam apparatus, multi-beamlet assembly, and method of inspecting a specimen

A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.

Beam blanking device for a multi-beamlet charged particle beam apparatus

The charged particle beam device includes a charged particle source and a beamlet-forming multiaperture plate. The device also includes a precompensator for reducing aberrations of the beamlets at a target, a scanner for scanning each of the beamlets, an objective lens for focusing each beamlet onto the target, and a controller configured to synchronize the precompensator and the scanner. The precompensator includes: at least one 'radially variable' multiaperture electrode in which the diameter of each aperture thereof scales with the distance of the aperture from the optical axis, z; and at least one 'cartesianally variable' multiaperture electrode in which the diameter of each aperture thereof scales with an x component of the position of the aperture.

Charged particle beam device and method of operating a charged particle beam device

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a plurality of apertures configured to create a plurality of beamlets from the charged particle beam; and a field curvature corrector. The field curvature corrector includes: a first multi-aperture electrode with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode with a second plurality of openings; and an adjustment device configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode and a second electrical potential (U2) of the second multi-aperture electrode. Further, a field curvature corrector and methods of operating a charged particle beam device are described.

Charged particle beam device, field curvature corrector, and methods of operating a charged particle beam device

A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector and a scanner, in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet is focused on a first spot and a second beamlet is focused on a second spot. In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point. In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point, the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot.

Device and method for operating a charged particle device with multiple beamlets

A multi-beam charged particle beam device is described. The multi-beam charged particle beam device includes a charged particle source configured to emit a primary charged particle beam; an aperture arrangement having openings configured to generate at least a first beamlet and a second beamlet of the primary charged particle beam; and a blanking device, the blanking device includes at least a first blanking deflector for the first beamlet and a second blanking deflector for the second beamlet; and a shield assembly having a first shielding element partially or fully surrounding the first blanking deflector.

Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device

A charged particle beam dump for a charged particle beam device is described. The beam dump includes an annular shaped body having an inner perimeter wall that defines an open annulus for passing of primary charged particle beamlets, the annular shaped body further having an outer perimeter wall and a bottom wall; and an annular shaped electrode provided partially above the annular shaped body having an inner perimeter side and an outer perimeter side, wherein the inner perimeter side is outside of the radius of the inner perimeter wall of the annular shaped body.

An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The electrostatic multipole device comprises a substrate with at least one aperture opening for the charged particle beam, which extends along the optical axis through the substrate, and four or more electrodes which are formed on a first main surface of the substrate to influence the charged particle beam propagating through the aperture opening, wherein each of the four or more electrodes is arranged at a radial distance from a beam limiting edge of the aperture opening. Further, a method of manufacturing an electrostatic multipole device is described.

Electrostatic multipole device, electrostatic multipole arrangement, and method of manufacturing an electrostatic multipole device

The present disclosure provides a charged particle beam device. The charged particle beam device includes an emitter arrangement configured to generate a primary charged particle beam having two or more primary charged particle sub-beams, a sample stage for supporting a sample, an objective lens for focusing the two or more primary charged particle sub-beams onto the sample, and a primary charged particle optics. The primary charged particle optics includes a coil provided between the emitter arrangement and the objective lens. The coil is configured to generate a magnetic field having a magnetic field component parallel to a longitudinal axis of the coil, wherein the magnetic field acts on the two or more primary charged particle sub-beams propagating along the longitudinal axis, and wherein an aspect ratio of the coil is at least 1. A controller is configured to adjust the magnetic field of the coil such that a first primary charged particle sub-beam of the two or more primary charged particle sub-beams is directed towards a first spot on the sample and a second primary charged particle sub-beam of the two or more primary charged particle sub-beams is directed towards a second spot on the sample, wherein the first spot and the second spot are spaced apart from each other.

Charged particle beam device, system for a charged particle beam device, and method for operating a charged particle beam device

The present disclosure provides a system for imaging a signal charged particle beam emanating from a sample by impingement of a primary charged particle beam. The system includes a detector arrangement having a first detection element for detecting a first signal charged particle sub-beam of the signal charged particle beam originating from a first spot on the sample and a second detection element for detecting a second signal charged particle sub-beam of the signal charged particle beam originating from a second spot on the sample, wherein the first detection element and the second detection element are separated from each other, and signal charged particle optics. The signal charged particle optics includes a coil configured to generate a magnetic field having a magnetic field component parallel to a longitudinal axis of the coil, wherein the magnetic field acts on the first signal charged particle sub-beam and the second signal charged particle sub-beam propagating along the longitudinal axis, and wherein an aspect ratio of the coil is at least 1, and a controller configured to adjust the magnetic field of the coil such that the first signal charged particle sub-beam is directed towards the first detection element and the second signal charged particle sub-beam is directed towards the second detection element.

System for imaging a signal charged particle beam, method for imaging a signal charged particle beam, and charged particle beam device

An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes a first electrical contact, a second electrical contact, and a high-resistance layer which extends at least partially around the optical axis and is configured to allow a current flow between the first electrical contact and the second electrical contact, wherein the first electrical contact contacts the high-resistance layer at a first circumferential position and is configured to provide a first potential to the first circumferential position, and wherein the second electrical contact contacts the high-resistance layer at a second circumferential position at an angular distance from the first circumferential position and is configured to provide a second potential to the second circumferential position. Further, an electrostatic multipole arrangement including two or more such multipole devices and a charged particle beam device are described.

Electrostatic multipole device, electrostatic multipole arrangement, charged particle beam device, and method of manufacturing an electrostatic multipole device

A multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes: an electrostatic deflector with at least two deflector electrodes for deflecting the charged particle beam by a deflection angle, wherein the deflector electrodes extend over a first length along the optical axis; and an electrostatic corrector comprising at least four corrector electrodes to compensate for an aberration of the charged particle beam, wherein the corrector electrodes extend over a second length along the optical axis, which is shorter than the first length. A distance between a projection of the deflector electrodes on the optical axis and a projection of the corrector electrodes on the optical axis may be smaller than the first length so that, during operation of the multipole device, first fringe fields generated by the deflector electrodes and second fringe fields generated by the corrector electrodes may spatially overlap, wherein the electrostatic corrector may be configured to compensate for an aberration of the charged particle beam caused by the electrostatic deflector.

Electrostatic multipole device, electrostatic multipole arrangement, charged particle beam device, and method of operating an electrostatic multipole device

Growing community of inventors

Munich, Germany

Benjamin John Cook