Osram Opto Semiconductors Gmbh

Pacific Light Technologies Corp.

Osram Opto Semiconductor Gmbh

Benjamin Daniel Mangum

Juanita N Kurtin

Kari N Haley

Weiwen Zhao

Nathan Evan Stott

David J O'Brien

Britta Göötz

Georgeta Masson

Brian Theobald

Norbert Puetz

Joseph A Treadway

Yagnaseni Ghosh

Julian Osinski

Ron Nelson

A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 &#x3bc;m, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.

Light-emitting device

A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

Semiconductor nanocrystal structure and optoelectronic device

A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein a first sub-pixel includes a first conversion element having a green phosphor, wherein a second sub-pixel includes a second conversion element having a red phosphor and wherein a third sub-pixel is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 &#x3bc;m, and wherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation.

Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.

Quantum dot (QD) delivery method

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

Quantum dot (QD) polymer composites for on-chip light emitting diode (LED) applications

A quantum dot includes a nanocrystalline core and an alloyed nanocrystalline shell made of a semiconductor material composition different from the nanocrystalline core. The alloyed nanocrystalline shell is bonded to and completely surrounds the nanocrystalline core.

Alloyed rod structure in a nanocrystalline quantum dot

A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material having a first bandgap, and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap.

Nanocrystalline quantum dot heterostructure

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.

Network of semiconductor structures with fused insulator coating

A lighting apparatus includes a housing structure, a light source supported within the housing structure, and a light coversion layer disposed above the light source. The light conversion layer comprises a plurality of non- or low-self absorbing quantum dots (QDs) embedded in a matrix material, each QD having a different light emission profile that is a function of a size and/or composition of the QD, each of the plurality of QDs selected to achieve a defined spectral emission profile for the lighting device when the plurality of QDs is illuminated by the light source.

Multiple quantum dot (QD) device

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH), Sr(OH), Ba(OH), (Me)NOH, (Et)NOH, or (Bu)NOH.

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Tualatin, OR, United States of America

Benjamin Daniel Mangum