Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Benjamin Damilano

Julien Brault

Stéphane Vezian

Amélie Dussaigne

Jean Massies

Carole Pernel

David Sotta

Sophie Bouchoule

Mariia Rozhavskaia

Alejandro Giacomotti

Jean-Yves Duboz

Jean-Michel Chauveau

Andrea Cattoni

Denis Lefebvre

Mohamed Al Khalfioui

Maia Brunstein

A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps: a) providing a first stack comprising a GaN or InGaN layer to be porosified and a barrier layer, b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, in such a way as to form a second stack, c) forming a mask on the GaN or InGaN layer to be porosified, d) porosifying the GaN or InGaN layer through the mask, e) transferring the GaN or InGaN porosified layer and the barrier layer to a support of interest, f) forming an InGaN layer by epitaxy on the barrier layer, whereby a relaxed epitaxial InGaN layer is obtained.

Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure

An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.

Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.

Semiconductor heterostructures with wurtzite-type structure on ZnO substrate

A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.

Method for producing nanostructures

A lighting device for total-internal-reflection fluorescence microscopy includes a substrate that is transparent to light, having a refractive index higher than that of water; a light-emitting device arranged in the interior of the substrate, suitable for emitting light radiation in the direction of a surface of the substrate, the light-emitting device being arranged such that at least one portion of the radiation reaches the surface with an angle of incidence larger than or equal to a critical angle of total internal reflection for an interface between the substrate and water; and at least one opaque mask, arranged in the interior or on the surface of the substrate so as to intercept a portion of the radiation that, in the absence of the mask, would reach the surface with an angle of incidence smaller than the critical angle. A lighting device to total-internal-reflection fluorescence microscopy is provided.

Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque mask

A pixel comprises three adjacent sub-pixels, formed by respective stacks of semi-conducting layers wherein: each sub-pixel comprises a first active layer, adapted for emitting a light at a first wavelength when an electric current passes through it; another sub-pixel comprises a second active layer, adapted for emitting a light at a second wavelength greater than the first wavelength; another sub-pixel comprises a third active layer, adapted for emitting a light at a third wavelength greater than the first wavelength and different from the second wavelength; at least one from among the second and third active layers being adapted for emitting light when it is excited by the light at the first wavelength emitted by the first active layer of the same sub-pixel. Semi-conducting structure and methods for the fabrication of such a pixel are provided.

Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

The disclosure relates to a making a matrix of III-V nitride, the matrix including at least an active first portion through which an electrical current passes and at least a passive second portion through which no electrical current passes, the matrix including at least a first zone forming a first quantum confinement region made of a III-V nitride, the first zone being positioned in the active first portion, and at least a second zone forming a second quantum confinement region made of III-V nitride, such that the second zone is positioned to the passive portion of the matrix.

Growing community of inventors

Nice, France

Benjamin Damilano