Cvd, Incorporated

Morton Thiokol Inc.

Thiokol Corporation

Benjamin C Hui

Jorg Lorberth

Ravindra K Kanjolia

Andreas A Melas

Luis I Victoriano

Robert C Wade

Ravi K Kanjolia

Robert B Hallock

Stephen J Manzik

Thomas Mitchell

William B Grant

A uniform dosimetry of vapor phase trimethylindium is provided by dissolving trimethylindium in a C.sub.3 -C.sub.5 trialkylindium and bubbling an inert carrier gas through the solution.

Liquid indium source

Trialkylgallium is purified of group II B p-type impurities, particularly Zn, Hg, and Cd, by contacting the trialkylgallium with a metallic gallium-containing melt. Also, trialkylgallium can be produced by contacting a dialkyl group II B compound with a metallic gallium-containing melt.

Purification of trialkylgallium, synthesis of trialkylgallium

Disclosed is a method for producing, from an aqueous basic composition, a primary arsine having one hydrocarbyl group bonded directly to As, the basic composition having been obtained from the combination of components comprising an alkali metal arsenite and a reactive hydrocarbyl halide by combining the aqueous composition with an acidic, nascent hydrogen-generating reducing agent to produce the primary arsine directly from the aqueous composition without isolation of the primary arsonic acid intermediate.

Method for the synthesis of primary arsines

A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

Chemical vapor deposition and chemicals with diarsines and polyarsines

Method for synthesizing alkyl halides of phosphorus, arsenic, or antimony from the corresponding phosphorus, arsenic, or antimony alkyl and phosphorus, arsenic, or antimony halide. An improved synthesis of alkyl phosphorus or arsenic hydrides from the corresponding alkyl phosphorus, arsenic, or antimony halides is also disclosed.

Synthesis of phosphorus and arsenic, halides and hydrides

The waste product from the synthesis of trimethylgallium is reacted with a hydride selected from an alkali metal hydride, a group IIIA hydride, or a group III hydride to produce dimethylaluminum hydride of high purity.

Synthesis of high purity dimethylaluminum hydride

A method is provided for highly pure mono- and dialkylarsines, particularly removing substantially all silicon-containing impurities. A mono- or dialkylarsine is reacted with either an alkali metal or an alkali metal hydrocarbyl, thereby producing an alkali metal alkylarsenide. Silicon, germanium, zinc and other metallic impurities are removed from the alkali alkylarsenide. Mono- and dialkylarsine is then regenerated by reaction of the alkali metal alkylarsenide with a proton donor.

Chemical process for obtaining high purification of monoalkylarsines and

Waste material containing substantial amounts of Li(MH.sub.3 R) compounds where M is Al or Ga are deactivated by dissolving and/or dispersing the waste material in a solvent in which ionic deactivation products are soluble and then adding a carbonyl-containing compound which reacts with the Li(MH.sub.3 R) compound.

Method of deactivating residues of the production of dimethylaluminum

Methods for forming or purifying organometallic compounds of elements of Group III-A of the Periodic Table. An intermediate compound is formed which is an adduct of the desired organometallic compound and a Group I-A or Group II-A compound. The adduct is nonvolatile, so volatile impurities are removed from the adduct by distillation. The adduct is decomposed to release the volatile organometallic compound, which is then distilled away from the nonvolatile remainder of the adduct. The method can be used to produce organometallic compounds which are substantially free of volatile metallic compounds and complexed solvents. A method of separating volatile Group II-B impurities from volatile Group III-A compounds is also disclosed.

Process for preparing or purifying Group III-A organometallic compounds

Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; and

Hydrocarbon-substituted analogs of phosphine and arsine, particularly

Hybrid organometallic compounds, particularly for metal organic chemical

A process for the preparation of compounds of the formula RBH.sub.3 CN wherein R is an alkali metal, a quaternary ammonium radical or a phosphonium radical wherein a compound of the formula RCN is treated with a stoichiometric amount or slightly less than a stoichiometric amount of a BH.sub.3 donor is described. The final products are useful as hydrolysis stable reductants and as synthetic intermediates.

Growing community of inventors

Peabody, MA, United States of America

Benjamin C Hui