Ag Associates (israel) Ltd.

Steag C.v.d. Systems Ltd.

Benjamin Brosilow

Itai Bransky

Sagy Levy

Hedvi Spielberg

Yitzhak Eric Gilboa

Yael Nemirovsky

Sara Stolyarova

A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400&deg; C.

Method and apparatus for removing native oxide layers from silicon wafers

Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH,OH; and then contacting the semiconductor wafer with Cl,and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Semiconductor wafer pretreatment utilizing ultraviolet activated chlorine

Systems and methods are described for semiconductor wafer pretreatment. A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint includes: providing a semiconductor wafer with the underlying oxide layer in a processing chamber; then pumping water from then processing chamber; and then depositing the silicon containing material on the semiconductor wafer. A step of seeding the semiconductor wafer can be conducted by exposing the semiconducotor wafer to a germanium containing gas. A chlorine containing precursor and/or hydrogen can be introduced into the processing chamber to increase the selectivity of the silicon containing material to the underlying oxide. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Selective hemispherical grain silicon deposition

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Afula, Israel

Benjamin Brosilow