Exxon Research and Engineering Company

Rca Inc.

Other

Benjamin Abeles

J Thomas Tiedje

Christopher R Wronski

Harry Louis Pinch

Don L Morel

Jonathan Isaac Gittleman

Thomas J Tiedje

Harry William Deckman

Richard B Hall

Theodore D Moustakas

Richard B Stephens

Appleton D Cope

Minyao Zhou

Exxon Research And Engineering Co

Wolfgang U Eberhardt

The present invention discloses a mixed ionic electronic conductor membrane comprising a dense layer sandwiched between two porous layers. Furthermore the invention discloses the application of this membrane to the use of partial oxidation of hydrocarbons. One porous layer, which is in contact with air, promotes the generation of oxygen ions. The oxygen ions diffuse through the dense layer to the second porous layer which is in contact with a hydrocarbon and result in partial oxidation of the hydrocarbon.

Multi-layer membrane composites and their use in hydrocarbon partical

The present invention is a membrane for separating aromatics from feeds which are mixtures of aromatics and saturates and for separating saturated linear hydrocarbons from feeds which are mixtures of saturated linear and saturated branched hydrocarbons. The membrane is a plasma polymer formed from plasma polymerizing monomers. In a preferred embodiment, the membrane is a plasma polymer film formed from plasma polymerizing the monomer 2,4 pentane dione.

Plasma polymer membrane (C-2564)

A high surface area substrate with controlled pore size and slot geometry is made by depositing at least two materials in alternating layers. The film is then broken up and one of the materials is etched away to produce a slotted surface structure. These slots can add size and shape selectively to separations and catalytic processes which because of the uniform and controllable dimensions (&gt;5A) would be superior to that obtainable from zeolites and clays.

Micro-porous superlattice material having zeolite-like properties

The present invention is an X-ray mirror including a multi-layered material in which the composition of the layers repeat, the repeat distance being between 8 and 250 A., In one embodiment, the mirror is produced by CVD. In another embodiment, the layers forming the structure are made of amorphous semiconductor or insulator material.

X-ray mirrors made from multi-layered material

A method of doping amorphous semiconductor films have a first bandgap by forming the first bandgap amorphous material in a first plurality of spaced apart layers; and then forming a second plurality of semiconductor layers of amorphous material having a second bandgap wider than the first bandgap interleaved with and contiguous with the first plurality such that the conductor and valence band step at the interfaces between the first plurality and the second plurality is of sufficient magnitude to confine carriers. The second plurality is doped such that the electrons in the gap states from the second plurality of layers transfer to the first plurality of layers and cause the conductivity of said first plurality to increase.

Proximity doping of amorphous semiconductors

A semiconductor device which includes an active region including a superlattice amorphous material wherein the energy gap has a predetermined value. A preferred embodiment of the device is a solar cell. In another embodiment of the present invention, the device is a tandem solar cell which includes a first active region including a superlattice material wherein the bandgap has a first predetermined value; a second active region including a second superlattice material wherein the bandgap has a second predetermined value different from said first predetermined value; a means for electrically interconnecting said first and second active regions such that current may flow between said first and second active regions.

Solar cell made from amorphous superlattice material

The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.

High-mobility amorphous silicon displaying non-dispersive transport

A thin film semiconductor device with enhanced optical absorption properties and a method for producing it. The device comprises a substrate having at least one sandblasted surface and a thin film of semiconductor material deposited on the sandblasted surface.

Optical absorption enhancement in amorphous silicon deposited on rough

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Hybrid method of making an amorphous silicon P-I-N semiconductor device

An electron gun includes two electrodes between which a resistive lens structure is mounted. The lens structure comprises a stack of alternate apertured electrode plates and insulator spacer blocks. A high resistance coating of, e.g., cermet or glaze material, is precoated along one side of each spacer block prior to assembly of the stack, so that upon assembly the stack has a high resistance electrical continuity from one end to the other.

Precoated resistive lens structure for electron gun and method of

A photoconductor body for a camera tube includes a semiconductor body including an overlayer of a material selected from a granular metal-insulator system. Suitable semiconductor materials are limited to those materials capable of providing Schottky barrier heights in excess of 0.9 eV. when fabricated with such overlayers and those having bandgaps greater than about 1.4 eV. A method of fabricating such photoconductive bodies is disclosed wherein a cadmium selenide semiconductor material is thermally treated to modify the Schottky barrier heights to a desired value in excess of about 0.9 eV.

Method of making camera tube target by modifying Schottky barrier heights

A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

Method of making high resistance cermet film

High resistance cermet film and method of making the same

A photoconductive body of antimony trisulfide is coated on one surface with a layer of an insulating material having particles of a conductive metal dispersed throughout. When used as a target for a vidicon type camera tube, the metal particle-containing insulating layer lowers the dark current of the tube without affecting the photocurrent or spectral response.

Growing community of inventors

Princeton, NJ, United States of America

Benjamin Abeles