Haldor Topse A/s

Topsoe A/s

Haldor Topsoe A/s

Bengt Peter Gustav Blennow

Thomas Heiredal-Clausen

Tobias Holt Nørby

Jeppe Rass-Hansen

Rainer Küngas

Niklas Bengt Jakobsson

John Bøgild Hansen

Martin Refslund Nielsen

Niels Christian Schjødt

Berit Hinnemann

Poul Georg Moses

Jeppe Rass-hansen

Casper Hadsbjerg

Artem Tarasenko

Niels Christian SCHJØDT

Tobias Holt Norby

Rainer Kungas

Tobias Holt NØRBY

Rainer KÜNGAS

Tobias NØRBY

In a method for supplying oxygen-enriched gas to an oxygen consuming process, in which the oxygen-enriched gas with a low nitrogen content is generated by supplying an anode-side feed gas comprising COto the anode side of a solid oxide electrolysis cell, oxygen is generated on the anode side of the solid oxide electrolysis cell. This way, an anode-side product gas is formed, in which the oxygen-enriched gas comprises at least a part. The oxygen-enriched gas has a low nitrogen content, and the temperature of the oxygen-enriched gas exiting the solid oxide electrolysis cell is between 600 and 1000° C. The method has multiple advantages, first of all as regards energy saving.

Method for supplying oxygen-enriched gas to an oxygen-consuming process

In a method for chromium upgrading of interconnects made of ferritic steel to be used in solid oxide cell stacks, comprising the steps of shaping the interconnect, depositing a coating comprising Cr on at least one surface of the shaped interconnect and performing one or more thermal treatments at a temperature below 1000° C., the resulting Cr concentration near the surface of the interconnect is higher than the Cr concentration in the ferritic steel before shaping. Specifically, the average Cr concentration of the shaped interconnect is increased to 26 wt % Cr or higher.

Method for chromium upgrading of ferritic steel interconnects for solid oxide cell stack applications

A SOC stack has interconnects with a maximum distance between the contact points which are designed to compensate for pressure difference between one side of the interconnect to the other side.

Solid oxide cell stack with a pressure difference between anode and cathode compartments

A method for the generation of a gas mixture including carbon monoxide, carbon dioxide and hydrogen for use in hydroformylation plants, including the steps of evaporating water to steam; feeding the steam to a solid oxide electrolysis cell (SOEC) or an SOEC stack at a sufficient temperature for the cell or cell stack to operate while effecting a partial conversion of steam to hydrogen; utilizing the effluent SOEC gas including Htogether with COfrom an external source as feed for a RWGS reactor in which the RWGS reaction takes place, converting some of the COand Hto CO and HO; removing some of or all the remaining steam from the raw product gas stream; using said gas mixture comprising CO, COand Hfor liquid phase hydroformylation utilizing carbon monoxide and hydrogen as reactants, while recycling COto the RWGS reactor.

Method for generating synthesis gas for use in hydroformylation reactions

The content of oxygen in molten metallic copper is reduced during the copper refining process by adding pure carbon monoxide, produced by electrolysis of carbon dioxide in a solid oxide electrolysis cell (SOEC), thereby removing oxygen through the reduction of CuO to Cu. This way, the purity of the metallic copper is increased.

Process for reducing the content of oxygen in metallic copper

Improved contact between interconnect and oxygen electrode material is achieved through a contact point between an electrode or a contact layer and a coated ferritic stainless steel interconnect, where the coating on the metallic interconnect comprises Cu.

Contact between interconnect and electrode

Improved contact between interconnect and oxygen electrode material in solid oxide cell (SOC) stacks is achieved through a contact point between the oxygen electrode or an oxygen-side contact layer of the SOC and a coated ferritic stainless steel interconnect in the SOC stack, where the coating on the metallic interconnect comprises Cu.

Contact between interconnect and cell in solid oxide cell stacks

A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-exchange plating. This way, a metallic copper-cobalt coating is formed on the interconnect.

Growing community of inventors

Humlebæk, Denmark

Bengt Peter Gustav Blennow