Thin Film Electronics Asa

Beamways Ab

Supraways

Bengt Gustafsson

Rolf Magnus Berggren

Johan Roger Axel Karlsson

The present invention includes a track () of a track system with straight, transition, curved, and switch track sections. The invention further comprises bogies () for vehicle cabins suspended under the track. Track sections of the track have an upper rail () and one or two lower rails (). Further, a bogie () has fore and aft sets of upper guide and switch wheels (), and one set of lower guide and switch wheels (). The bogies () also have one left and/or one right load bearing wheel () and one drive wheel facing upwards and engaging a downwards directed drive wheel running surface () of the upper rail. Each set of lower guide wheels consist of left and right wheel pairs () so that transition sections can be passed without moving any parts of the bogie (). Switch wheels () are separated from guide wheels so that they can be positioned according to the preferred direction of travel well before reaching a switch.

Track and bogie for suspended vehicles

A field-effect transistor is made with electrodes ( ) and isolators ( ) in vertically provided layers, such that at least the electrodes ( ) and the isolators ( ) form a step ( ) oriented vertically relative to the first electrode ( ) or the substrate ( ). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes ( ) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode ( ) the gate electrode of the field-effect transistor. Over the layers in the vertical step ( ) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode ( ) directly or indirectly and forming a vertically oriented transistor channel ( ) of the p or n type between the first ( ) and the second ( ) electrode. In a method for fabrication of a field effect transistor a vertical step ( ) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material ( ) is deposited over the first electrode ( ) and the vertical step ( ) such that a vertically oriented transistor channel between the drain and source electrode ( ) is obtained. In a JFET the semiconductor material ( ) contacts the gate electrode ( ) directly. In a MOSFET a vertically oriented gate isolator ( ) is provided between the gate electrode ( ) and the semiconductor material ( ).

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Linköping, Sweden

Bengt Gustafsson