Hong Kong Baptist University

City University of Hong Kong

The Hong Kong University of Science and Technology

Beng Soon Ong

Yanlian Lei

Zuankai Wang

Shuhuai Yao

Kangning Ren

Hongkai Wu

Wanbo Li

Ka Lok Chiu

Yong Lu

Shu Kong So

Carr Hoi Yi Ho

Huanyang Cao

Zeyu Li

Chiu Wing Chan

Sin Hang Cheung

Han Sun

Three-dimensional (3D) hierarchical morphologies widely exist in natural and biomimetic materials, which impart preferential functions including liquid and mass transport, energy conversion, and signal transmission for various applications. While notable progress has been made in the design and manufacturing of various hierarchical materials, the state-of-the-art approaches suffer from limited materials selection, high costs, as well as low processing throughput. Herein, by harnessing the configurable elastic crack engineering-controlled formation and configuration of cracks in elastic materials, an effect normally avoided in various industrial processes, the present invention provides a facile and powerful technique to enable the faithful transfer of arbitrary hierarchical structures with broad material compatibility and structural and functional integrity. The present invention provides a cost-effective, large-scale production method of a variety of flexible, inexpensive, and transparent 3D hierarchical and biomimetic materials.

Crack engineering as a new route for the construction of arbitrary hierarchical architectures

The present invention relates to the provision of an organic compound or compounds containing a fluorenone derivative structure or its substituted derivatives to enhance the thermal stability of organic solar cells.

Enhancing thermal stability of bulk heterojunction solar cells with fluorenone derivatives

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

Solution process for fabricating high-performance organic thin-film transistors

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor: mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

Growing community of inventors

Hong Kong, China

Beng Soon Ong