Xerox Corporation

Other

University of Rochester

Ping Liu

Yiliang Wu

Yuning Li

Nan-xing Hu

Beng S. Ong

Beng S Ong

Yu Qi

Nan-Xing Hu

Raj D Patel

Dasarao K Murti

Lu Jiang

Guerino G Sacripante

Barkev Keoshkerian

Walter Mychajlowskij

Paul Farrell Smith

Ah-Mee Hor

Zoran D Popovic

Cheng-Kuo Hsiao

Grazyna E Kmiecik-Lawrynowicz

Shuang Xie

Michael A Hopper

Grazyna Kmiecik-Lawrynowicz

H Bruce Goodbrand

Giuseppa Baranyi

Huoy-Jen Yuh

David J Sanders

T Hwee Ng

Lupu Alexandru

Hualong Pan

Hadi K Mahabadi

Mihaela Maria Birau

Patricia Ann Burns

Helen R Cherniack

Fernando Perez Yulo

John R Fuller

Mohammad Esteghamatian

Beverly C Dutoff

Marcel Philippe Breton

John F Yanus

Stephan V Drappel

William W Limburg

Markus Rudolf Silvestri

James McConnell Duff

Dale S Renfer

Michael Jon Levy

Raymond W Wong

T Brian McAneney

John S Chambers

Daniel A Foucher

Richard P Veregin

Richard L Schank

Richard B Lewis

Maria Birau

Padam K Angra

Lurdes M Martins

Kayong K Koch

Paul F Smith

Gabriel Iftime

Timothy J Fuller

Peter Michael Kazmaier

Chieh-Min Cheng

Robert Arthur Sprague

Yuhua Tong

Damodar M Pai

Kathleen M Carmichael

C Geoffrey Allen

Joseph C Mammino

Sandra J Gardner

Robert C Yu

Bing R Hsieh

Paul Joseph Gerroir

Hany Maher Aziz

John W Spiewak

Allan K Chen

Milan Stolka

Melvin D Croucher

Rafik O Loutfy

Zhen Lai

Martin A Abkowitz

Constance J Thornton

Terry L Bluhm

Emily Louise Moore

Carol A Jennings

Samson A Jenekhe

Amy Avolia Grillo

Garland J Nichols

Robert N Jones

Edward J Radigan

Susan Robinette

Guenno G Sacripante

Richard Fong

Robert McNamara

Thomas B McAneney

Alphonsus Hon-Chung Ng

Gwynne E McAneney

Jessica Sacripante

Duff James M

Maureen M Kedian

Walter Mychajlowskijj

An encapsulation, barrier, or protective layer for electronic devices is disclosed comprising a lac-based material, its synthetic form and variant, or a combination thereof, which protects electronic devices from adverse environmental effects.

Encapsulation layer for electronic devices

A composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation, wherein the viscosity of the composition results from a process comprising (a) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (b) lowering the temperature of the composition from the elevated temperature to the first lower temperature; and (c) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature, wherein the amount of the polymer dissolved in the liquid at the elevated temperature ranges from about 0.2% to about 5% based on the total weight of the polymer and the liquid.

Gelable composition

A polymer of the formula/structure wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each Rand Ris independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; Rand Rare independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR' wherein R&#x2032; is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Functionalized heteroacenes

A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.

Fabricating amorphous zinc oxide semiconductor layer

An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R' and R&#x2033; are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Electronic devices

There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.

Thin-film transistor

An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.

Wax encapsulated electronic devices

An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.

Electronic device having a dielectric layer

An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rsubstituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

Polythiophenes and devices thereof

An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

Poly(alkynylthiophene)s and electronic devices generated therefrom

An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Device containing compound having indolocarbazole moiety and divalent linkage

An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

Organic thin film transistors

An electronic device comprising a polymer of Formula or Structure (I) wherein Ris hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; Ris hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; Rand Rare independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom

A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

Organic thin film transistor with dual layer electrodes

Growing community of inventors

Mississauga, Canada

Beng S Ong