International Business Machines Corporation

Benedikt Kersting

Abu Sebastian

Manuel Le Gallo-Bourdeau

Athanasios Vasilopoulos

Julian Röttger Büchel

Systems and methods for modulating conductance of a plurality of unit cells are described. A controller can determine a plurality of conductance values for a plurality of unit cells arranged in a crossbar arrangement. The plurality of unit cells can include non-volatile memory devices. The plurality of conductance values can be less than maximum conductance values of the plurality of unit cells. The controller can determine a read gate voltage for driving a plurality of access transistors to read from connected to the plurality of unit cells under a read operation. The controller can map a plurality of weights to the plurality of conductance values and to the read gate voltage.

Conductance modulation in computational memory

The present disclosure relates to a method for compensating non-ideality of a neuromorphic memory device. The neuromorphic memory device comprising a crossbar array of wordlines and bitlines. The crossbar array comprises a block of wordline and bitline segments, wherein memory elements of the block are programmed to represent array values. The device is configured for applying a set of inputs to the initial wordlines for performing dot products. The method comprises: performing at least one of: wordline expansion or bitline expansion of the block. The set of inputs may be applied to the initial wordlines of the expanded block and in case the bitline expansion is performed an additional input may be applied to the additional wordlines of the expanded block. The currents flowing in the bitlines of the expanded block may be measured. The dot products may be determined using the measured currents.

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Lüdinghausen, Germany

Benedikt Kersting