Analogic Corporation

Ben Tuval

Ruvin Deych

Sorin Marcovici

Simon George Harootian

Alexander T Botka

The present disclosure includes multiple ways of providing photodetector interconnectivity using, for example: a) single-layered thick or thin film ceramic substrate to change a node pitch from one facing to another, and/or b) direct bonding of photodiode circuit to a flex cable interconnect.

Detection system and detector array interconnect assemblies

Anti-scatter plates are used to attenuate secondary radiation so that it is not detected by a detector array. However, anti-scatter plates often cast dynamic shadows on the detector array which results in noise in signals produced by the detector array. As disclosed herein, an anti-scatter grid comprises at least two anti-scatter plates. A percentage difference in the shadows cast by the first and the second anti-scatter plates is substantially zero (e.g., causing uniform percentage change in shadows cast on the detector array). Additionally, the shadows that are cast by the anti-scatter plates may be substantially static. In one embodiment, this is accomplished by having a top surface of an anti-scatter plate that has a transverse dimension that is less than a bottom surface of the anti-scatter plate.

Anti-scatter grid or collimator

An integrated radiation detecting and collimating assembly for an x-ray tomography scanning system. The assembly includes a housing which mounts to a spine of the system and aligns corresponding arrays of photodiodes, scintillator crystals and anti-scatter plates with one another and with x-ray beams arriving directly at the detectors from the focal spot. The arrays of photodiodes, crystals and anti-scatter plates are thus all fixed relative to one another within the housing, which is itself securely fixed to the frame of the scanner system.

Integrated radiation detecting and collimating assembly for X-ray

A coplanar photodiode construction is disclosed having particular utility in X-ray detection applications in which alternating P-doped and N-doped regions, separated by undoped material, are located in relatively shallow depth under and along the surface between the photodiode and an associated X-ray scintillating crystal.

Growing community of inventors

Burlington, MA, United States of America

Ben Tuval