Applied Materials, Inc.

Lam Research Corporation

Apple Inc.

Ben-Li Sheu

Paul F Ma

Annamalai Lakshmanan

Guodan Wei

Nicole Lundy

Feng Quan Liu

Rajinder Dhindsa

David P Thompson

Andrew D Bailey, Iii

Eric A Hudson

Sang Ho Yu

David Knapp

Jiang Lu

Vinay Pohray

Mei Yin Chang

Mehul B Naik

Xianmin Tang

Sunggu Kang

Roey Shaviv

Joung Joo Lee

Bencherki Mebarki

Steven E Molesa

Young Cheol Yang

Tae Hong Ha

Zhiyuan Wu

Ismail T Emesh

Lai Wang

Shirish A Pethe

Jaein Choi

Meng Chu Tseng

Jonathan Sungehul Kim

Hairong Tang

Martin Shim

Joy M Johnson

To extract light from a light-emitting diode (and thereby improve efficiency of the display), a microlens stack may be formed over the light-emitting diode. The microlens stack may include an array of microlenses that is covered by an additional single microlens. Having stacked microlenses in this way increases lens power without increasing the thickness of the display. The array of microlenses may be formed from an inorganic material whereas the additional single microlens may be formed from an organic material. The additional single microlens may conform to the upper surfaces of the array of microlenses. An additional low-index layer may be interposed between the light-emitting diode and the array of microlenses. A diffusive layer may be formed around the light-emitting diode to capture light emitted from the light-emitting diode sidewalls.

Light-emitting diode display pixels with microlens stacks over light-emitting diodes

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

Doping control of metal nitride films

Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect

Methods for forming a copper seed layer having improved anti-migration properties are described herein. In one embodiment, a method includes forming a first copper layer in a feature, forming a ruthenium layer over the first copper layer in the feature, and forming a second copper layer on the ruthenium layer in the feature. The ruthenium layer substantially locks the copper layer there below in place in the feature, preventing substantial physical migration thereof.

Seed layers for copper interconnects

Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

Cobalt manganese vapor phase deposition

Methods for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

Methods for asymmetric deposition of metal on high aspect ratio nanostructures

Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use

Methods of depositing cobalt manganese films

An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas inlet, and a gas outlet. A gas source comprises a fluorine free deposition gas source and an etch gas source. A controller comprises at least one processor and computer readable media, comprising computer readable code for providing a conditioning for a patterned pseudo-hardmask, wherein the conditioning comprises computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas, computer readable code for forming a plasma, computer readable code for providing a bias less than 500 volts, and computer readable code for forming a deposition on top of the patterned pseudo-hardmask, computer readable code for etching the etch layer, and computer readable code for cyclically repeating the conditioning and etching at least twice.

Wiggling control for pseudo-hardmask

A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features is provided. The method includes (a) non-etching plasma pre-etch treatment of the photoresist mask, and (b) etching of a feature in the etch layer through the pre-treated photoresist mask using an etching gas. The non-etching plasma pre-etch treatment includes (a1) providing a treatment gas containing Hand COS, (a2) forming a plasma from the treatment gas, and (a3) stopping the treatment gas.

Method for reducing line width roughness with plasma pre-etch treatment on photoresist

Growing community of inventors

Sunnyvale, CA, United States of America

Ben-Li Sheu