Photronics Corp.

Kla-tencor Technologies Corporation

Ben Eynon

William Volk

Brian Grenon

Photolithography masks, systems and methods and more particularly to photolithography masks systems and methods for making and using silicon dioxide mask substrates are disclosed. The mask generally includes a silicon-dioxide mask substrate having a front surface, a patterned layer disposed on the front surface, and a coating of a fluoride of an element of group IIA that covers the patterned layer. The coating reduces undesired crystal growth on the silicon dioxide mask substrate. Such masks can be incorporated into photolithography systems and used in photolithography methods wherein a layer of photoresist is formed on a substrate and to radiation that impinges on the mask. Such a mask can be fabricated, e.g., by forming a patterned layer on a front surface of a silicon dioxide mask substrate and covering the patterned layer with a coating of a fluoride of an element of group IIA.

Films for prevention of crystal growth on fused silica substrates for semiconductor lithography

A fused silica pellicle for use on photomasks having increased durability and improved transmission uniformity and birefringence properties. The pellicle is to be intimately secured to the patterned surface of a photomask.

Fused silica pellicle in intimate contact with the surface of a photomask

A fused silica pellicle for use on photomasks having increased durability and improved transmission uniformity and birefringence properties. The pellicle may be secured to the photomask using an adhesive or a slide rail system, or may be held in place using a static charge.

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Round Rock, TX, United States of America

Ben Eynon