Kromek Limited

Ben Cantwell

Ian Radley

Max Robinson

David Edward Joyce

Arnab Basu

Paul Scott

Andy Brinkman

A method of identifying the material content of an object comprises: providing a radiation source and a radiation detector; irradiating a test object with radiation from the source; collecting at the detector system intensity data for radiation emergent from the test object; resolving the intensity data spectroscopically between a plural set of energy bands; numerically processing the spectroscopically resolved intensity data via the following steps: considering a material attenuation coefficient as a plural set of energy dependent polynomial equations in atomic number with a set of energy dependent coefficients across the said plural set of energy bands; determining a measured attenuation coefficient at each said energy band; calculating therefrom one or more orders of Compound Proton Number and/or effective mass thickness and/or density and for example a Compound Proton Number Set comprising plural order powers and preferably plural higher order powers of weighted compound atomic number.

Method for the radiological investigation of an object

A method processing an image dataset of radiation emergent from a test object after its irradiation by a suitable radiation source is described which comprises the steps of: generating an image dataset comprising a spatially resolved map of items of intensity data from the radiation emergent from the test object; further, resolving the intensity data items spectroscopically between at least two energy bands across the spectrum of the source; numerically processing the spectroscopically resolved intensity data items to determine a further spatially resolved dataset of data items representative of one or more orders of Compound Proton Number and/or effective mass thickness and/or a density; generating a segmented image dataset using the said dataset of data items representative of one or more orders of Compound Proton Number and/or effective mass thickness and/or a density. The method applied as part of a method for the radiological examination of an object and an apparatus for the same are also described.

Detection and/or classification of materials

A method for monitoring objects for example for facilitating the identification and/or authentication of objects comprises: in a first recording phase: irradiating an object with a suitable source of radiation, collecting intensity information about radiation emergent from the object, resolving the intensity information spectroscopically between at least two energy bands, and storing the resultant dataset as a reference dataset; and in a second verification phase: irradiating an object with a suitable source of radiation, collecting intensity information about radiation emergent from the object, resolving the intensity information spectroscopically between at least two energy bands, and using the resultant dataset as a test dataset; identifying the object and retrieving its corresponding reference dataset; comparing the test dataset and the reference dataset within predetermined tolerance limits, and: in the event that the reference dataset and the test dataset correspond within the predetermined tolerance limits, treating the object as verified or in the event that the reference dataset and the test dataset differ by more than the predetermined tolerance limits, in a third identification phase: numerically processing the resolved intensity information from the test dataset to derive therefrom a dataset of information characteristic of the composition of the object, and using this information to identify the composition of the object.

Object monitoring using multi spectral radiation

A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.

Semiconductor device and method of manufacture thereof

Apparatus for vapor phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed.

Apparatus for crystal growth

Device and method of forming a device in which a substrate () is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material () is formed on the substrate, either directly on the substrate () or with an intervening thin film layer or transition region (). A particular application of the device is for a radiation detector.

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Durham, United Kingdom

Ben Cantwell