USA As Represented by Secretary of the Navy

Bela Molnar

Michael Y Frankel

Jin Ung Kang

Harry B Dietrich

Single event upset failure are suppressed in GaAs-based electronics by implanting the GaAs substrate with an appropriate dose of O and at least one of either Al, Cr, or In.

Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds

A method of annealing both N and P-type ion-implanted GaAs and InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide (GaAs) or indium phosphide (InP) semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si.sub.3 N.sub.4, SiO.sub.2, AlN, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing.

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Alexandria, VA, United States of America

Bela Molnar