Yangtze Memory Technologies Co., Ltd.

Beihan Wang

Wei Xu

Ji Xia

Pan Huang

Wenxiang Xu

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack on the substrate; and a source contact structure extending vertically through the memory stack. The source contact structure includes a first source contact portion in the substrate and having a conductive material different from the substrate. The source contact structure also includes a second source contact portion above, in contact with, and conductively connected to the first source contact portion.

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack above the substrate, and a peripheral contact structure outside of the memory stack and in contact with the substrate. The peripheral contact structure includes a first peripheral contact portion in the substrate and having a conductive material different from the substrate. The peripheral contact structure also includes a second peripheral contact above, in contact with, and conductively connected to the first peripheral contact portion.

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Wuhan, China

Beihan Wang