Yangtze Memory Technologies Co., Ltd.

Beibei Zhu

Lan Yao

Jiaji Wu

The present disclosure discloses a semiconductor device, a three-dimensional memory and a method for fabricating the semiconductor device. The method includes forming a shallow trench isolation trench in a substrate. The substrate comprises an active region including a source region, a channel region, and a drain region. The shallow trench isolation trench is located on a periphery of the active region of the substrate. The method further comprises forming a bottom isolating layer in a bottom portion of the shallow trench isolation trench, forming a gate structure on a channel region of the substrate, and forming a hard insulating layer in an upper portion of the shallow trench isolation trench and on sidewalls of the active region, such that the hard insulating layer covers a source region and a drain region of the substrate.

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Wuhan, China

Beibei Zhu