Solaero Technologies Corp.

Bed Pantha

Nathaniel Miller

Daniel Derkacs

Mark A Stan

Pravin Patel

Samantha Cruz

Daniel James Aiken

Alexander Haas

Benjamin Cho

Samantha Whipple

A multijunction solar cell and its method of fabrication, including an upper and a lower solar subcell each having an emitter layer and a base layer forming a photoelectric junction; a near infrared (NIR) wideband reflector layer disposed below the upper subcell and above the lower subcell for reflecting light in the spectral range of 900 to 1050 nm which represents unused and undesired solar energy and thereby reducing the overall solar energy absorptance in the solar cell and providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.

Distributed bragg reflector structures in multijunction solar cells

A multijunction solar cell including a substrate and at least one solar subcell having an emitter layer, a base layer, and a window layer adjacent to the emitter layer composed of a semiconductor window material, wherein the window material has a graded composition such that the material at the interface between the top surface of the emitter layer of the at least one solar subcell and the bottom surface of the window layer has a compression as measured by a delta in the Bragg angle from the substrate in a range of 0 to 500 arcseconds in compression, and material at the top surface of the window layer has a tension as measured by a delta in the Bragg angle from the substrate in a range of 50 to 700 arcseconds in tension, wherein the delta in the Bragg angle is obtained from a rocking curve from a triple axis coupled scan of &#x3a9; and 2&#x3b8; (omega-2theta) using 1.5406 &#x212b; radiation.

Solar cell with gradation in the top window layer

The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.7 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlGaAs layer with 0.7&#x3c;x&#x3c;1.0 and having a band gap of greater than 1.85 eV.

Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell

Distributed Bragg reflector structures in multijunction solar cells

The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.8 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlGaAs layer with 0.8&#x3c;x&#x3c;1.0 and having a band gap of greater than 2.0 eV.

Growing community of inventors

Albuquerque, NM, United States of America

Bed Pantha