Freescale Semiconductor,inc.

Nxp Usa, Inc.

Beatrice Bernoux

Jean Michel Reynes

Rene Escoffier

Josef C Drobnik

Ivana Deram

Pierre Jalbaud

A battery equalization circuit is provided, including: a positive battery node connecting to a positive node of a battery cell in a battery circuit with a plurality of other battery cells; a negative battery node connected to a negative node of the battery cell; a transformer winding receiving an AC voltage, the transformer winding having an upper transformer node and a tower transformer node; an upper triac connected between the positive battery node and the upper transformer node; a lower triac connected between the negative battery node and the lower transformer node; a control circuit for controlling the upper triac and the lower triac based on a measured cell voltage between the positive battery node and the negative battery node, and a total battery voltage of the battery circuit; and an isolation element connected between the control circuit and a data bus.

Circuit and method for battery equalization

A switch mode power supply has a first and second branch of an inductive element; a first switching element and a second switching element connected in series. Both branches are coupled to a power source in parallel. A controller controls said switching elements for operating said switch mode power supply in a plurality of consecutive time periods, wherein more than two of said switching elements are closed, i.e. at least one in each branch. The power supply has a polarity switching element coupled between said branches for receiving a pulsed voltage for providing an output voltage of a switchable polarity. The controller receives a feedback signal corresponding to the output voltage, compares the feedback signal to a reference waveform, and controls said switching elements and the polarity switching element in dependence of said comparing for generating the output voltage according to the reference waveform.

Switch mode power supply with switchable output voltage polarity

A transistor power switch device comprising an array of vertical transistor elements for carrying current between first and second faces of a semiconductor body. The device also comprises a semiconductor monitor element comprising first and second semiconductor monitor regions in the semiconductor body and a monitor conductive layer distinct from the current carrying conductive layer of the transistor array. The semiconductor monitor element presents semiconductor properties representative of the transistor array. Characteristics of the semiconductor monitor element are measured as representative of characteristics of the transistor array. Source metal ageing of a transistor power switch device is monitored by measuring and recording a parameter which is a function of a sheet resistance of the monitor conductive layer when the transistor power switch device is new and comparing it with its value after operation of the device. A measured current is applied between a first location on an elongate strip element of the monitor conductive layer and a first location on one of a pair of lateral extensions of the strip, and the corresponding voltage developed between a second location on the elongate strip element and the other of said pair of lateral extensions is measured.

Transistor power switch device and method of measuring its characteristics

A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.

Power MOS transistor device

A transistor power switch device comprising an array of vertical transistor elements for carrying current between the first and second faces of a semiconductor body and a vertical avalanche diode electrically in parallel with the array of vertical transistors. The array of transistor elements includes at the first face an array of source regions of a first semiconductor type, at least one p region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the p region, and a conductive layer contacting the source regions and insulated from the control electrode. The vertical avalanche diode is configured to conduct breakdown current between the first and second faces in the off state of the device and having a first current carrying diode region of the second semiconductor type in contact with the first face and with the conductive layer and a second semiconductor region of the first semiconductor type electrically connected with the second face.

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Tournefeuille, France

Beatrice Bernoux