Infineon Technologies Austria Ag

Beate Weissnicht

David Laforet

Stefan Krivec

Ulrike Fastner

Arno Zechmann

Elisabeth Schwarz

Annette Sanger

A semiconductor device includes a gate structure that extends from a first surface into a semiconductor portion and that surrounds a transistor section of the semiconductor portion. A field plate structure includes a field electrode and extends from the first surface into the transistor section. A mesa section of the semiconductor portion separates the field plate structure and the gate structure. A contact structure includes a first portion directly adjoining the mesa section and a second portion directly adjoining the field electrode. The first and second portions include stripes and are directly connected to each other.

Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode

In an embodiment, a method includes forming an adhesion promotion layer on at least portions of a conductive surface arranged on a Group III nitride-based semiconductor layer, applying a resist layer to the adhesion promotion layer such that regions of the conductive surface are uncovered by the adhesion promotion layer and the resist layer, applying by electroplating a conductive layer to the regions of the conductive surface uncovered by the adhesion promotion layer and the resist layer, and removing the resist layer and removing the adhesion promotion layer.

Semiconductor wafer and method

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Villach, Austria

Beate Weissnicht