Asml Netherlands B.v.

Asml Holding N.v.

Bearrach Moest

Marcus Adrianus Van De Kerkhof

Marc Antonius Maria Haast

Wim Tjibbo Tel

Haico Victor Kok

Timotheus Franciscus Sengers

Andre Bernardus Jeunink

Laurentius Johannes Adrianus Van Bokhoven

Stoyan Nihtianov

Borgert Kruizinga

Lis Karen Nanver

Arie Johan Van Der Sijs

Vasco Miguel Matias Serrao

Thomas Ludovicus Maria Scholtes

Gerardus Wilhelmus Petrus Baas

Francesco Sarubbi

Antonius Andreas Johannes Schuwer

Gregory Micha Gommeren

Martijn Pot

Torsten Harzendorf

Erik Roelof Loopstra

Joeri Lof

Frank Staals

Willem Jurrianus Venema

Yang-Shan Huang

Hoite Pieter Theodoor Tolsma

Erik Petrus Buurman

Stefan Carolus Jacobus Antonius Keij

Thomas Josephus Maria Castenmiller

Enno Van Den Brink

Stan Henricus Van Der Meulen

Hermen Folken Pen

Johannes Wilhelmus Maria Cornelis Teeuwsen

Petrus Wilhelmus Josephus Maria Kemper

Valerio Altini

Hans Erik Kattouw

Federico La Torre

Cedran Bomhof

Peter Werner Weissbrodt

Christine Henriette Schouten

Manfred Schrenk

Johannes Onvlee

Erik Henricus Egidius Catharina Eummelen

Christopher Charles Ward

Robbert Jan Voogd

Norbertus Josephus Martinus Van Den Nieuwelaar

Petrus Franciscus Van Gils

Johannes Adrianus Cornelis Maria Pijnenburg

James Robert Downes

Peter A Delmastro

Adrianus Martinus Van Der Wielen

Lowell Lane Baker

Rowin Meijerink

Sytse Postma

Manfred Helmut Gustav Wilhelm Johannes Schrenk

Cornelis Lambertus Maria Van Weert

Petrus Wilhelmus Joseph Maria Kemper

Wijnand Hoitinga

Mare Antonius Maria Haast

Peter Weissbrodt

Thijs Schenkelaars

Derk Onck

A method is provided for determining surface parameters of a patterning device, comprising the steps of: positioning the patterning device with respect to a path of an exposure radiation beam using a first measurement system, providing the patterning device at a first focal plane of a chromatic lens arranged in a second measurement system, illuminating a part of a surface of the patterning device with radiation through the chromatic lens, wherein the radiation comprises a plurality of wavelengths, determining a position of the illuminated part of the patterning device in a first and second direction, collecting at least a portion of radiation reflected by the patterning device through the chromatic lens, measuring an intensity of the collected portion of radiation as a function of wavelength, to obtain spectral information of the illuminated area, and determining the surface parameters of the patterning device at the determined position from the spectral information.

Measurement system and method for characterizing a patterning device

A method of predicting deflection of a pellicle which will occur during movement of the pellicle in a lithographic apparatus, the method including receiving parameters regarding properties of the pellicle and receiving parameters regarding the expected movement of the pellicle. The parameters are applied to a model which predicts deflection of the pellicle as a function of those parameters. The model includes a plurality of sub-models which relate to different components of deflection of the pellicle. An output of the model may be used to predict.

Lithographic method

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

Lithographic process and apparatus and inspection process and apparatus

An apparatus including an illumination system to condition a radiation beam, a support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system to project the patterned radiation beam onto a target portion of the substrate, and a control system configured to: receive pattern data characterizing a pattern distribution, receive radiation data characterizing the radiation beam, determine a dissipation distribution of the pattern based on the pattern data and the radiation data, determine deformation of the pattern by applying the dissipation distribution in a thermo-mechanical model of the patterning device, and determine a control signal to control a component of the apparatus based on the deformation of the pattern.

Lithographic apparatus and device manufacturing method

A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

A lithographic apparatus has a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

Estimating deformation of a patterning device and/or a change in its position

A lithographic apparatus includes at least one image alignment sensor for receiving radiation projected from an alignment mark on a reticle. Processor processes signals from the sensor(s) to resolve spatial information in the projected alignment mark to establish a reference for measuring positional relationships between a substrate support and the patterning location. Examples of the sensor include line arrays of photodetectors. A single array can resolve spatial information in a plane of the sensor (X, Y direction) and in a perpendicular (Z) direction. At least a final step in establishing the reference position is performed while holding the substrate support stationary. Errors and delays induced by mechanical scanning of prior art sensors are avoided. Alternatively (not illustrated) the sensor is moved for mechanical scanning relative to the substrate support, independently of the main positioning systems.

Lithographic apparatus, device manufacturing method, and method of applying a pattern to a substrate

The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens () arranged to form a detection image of the aerial pattern and an image detector () arranged to measure radiation intensities in a plurality, of positions in the detection image.

Lithographic apparatus configured to reconstruct an aerial pattern and to compare the reconstructed aerial pattern with an aerial pattern detected by an image sensor

A lithographic apparatus comprising an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate, wherein the lithographic apparatus further comprises a patterning device masking blade provided with a hole, a diffusing material being located at the hole.

Lithographic apparatus and method

A device for transmission image sensing for sensing an aerial image in a lithographic exposure apparatus comprises a projection system arranged to form, at an image side of the projection system, an aerial image of an object mark. The device further comprises a detector comprising a slit pattern having features corresponding to at least a part of the aerial image. The slit pattern is arranged to be exposed to the aerial image. The detector is further being arranged to detect detection radiation transmitted by the slit pattern; wherein d&#x3c;0.85 &#x3bb;/NA, where d represents the dimension of the smallest feature of the slit pattern, &#x3bb; represents the intended wavelength of the detection radiation, and NA, which is larger than 1, represents the numerical aperture of the image side.

Device and method for transmission image sensing

The invention relates to an image sensor for detection of an aerial image formed by a beam of radiation in a lithographic projection apparatus for exposing a pattern onto a substrate held in a substrate plane by a substrate holder. The image sensor has an image detector and a lens. The lens is arranged to project at least part of the aerial image onto the image detector. The image sensor is positioned such within the substrate holder that the lens is positioned proximate the substrate plane.

Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus

During an alignment calibration process in a lithographic apparatus using a sensor to detect a property of a projected image at substrate level, a diffuser is inserted into the illumination beam to increase the range of angles of radiation incident on the substrate. Thereby it can be ensured that sufficient radiation enters the sensor even when there is a mismatch between the illumination mode used and the acceptance NA of the sensor.

Lithographic projection apparatus, device manufacturing methods and mask with sensor and diffuser for use in a device manufacturing method

Disclosed is a device manufacturing method and associated apparatus, the method comprising transferring a pattern from a patterning device onto a substrate. The method relates to the alignment of said patterning device and said substrate, and comprises imparting a radiation beam onto an alignment structure on said patterning device so as to obtain a resultant aerial image; scanning an image sensor in accordance with a scanning scheme, through a target volume containing said resultant aerial image, the relative positions of said image sensor and said substrate being known or subsequently determined; and measuring features of said image and thereby determining of the location of the alignment structure relative to the image sensor; wherein an alternative scanning scheme is used in which, for example two or more scans through the whole target volume are performed, having a total duration the same as a conventional single continuous scan.

Lithographic apparatus, computer program product and device manufacturing method

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Eindhoven, Netherlands

Bearrach Moest