Intel Corporation

Leland Stanford Junior University

Intel Magnetics, Inc.

Baylor B Triplett

Krishna Chandra Saraswat

Chi On Chui

Paul C McIntyre

Daniel N Tang

Stefan K Lai

Guido Galli

Simon Y Wang

Carlo Ferrando

Susan L Kao

Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiOequivalent ('T'). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.

High-k dielectric for thermodynamically-stable substrate-type materials

A method of reducing the degradation effects associated with avalanche injection or tunnelling of hot-electrons in a field-effect semiconductor device is disclosed. The method of the present invention includes covering the active regions of the semiconductor device with a protective titanium barrier layer which is deposited directly underneath the ordinary metalization layers used for connecting the devices to bit and word lines within an array. Inclusion of the titanium barrier layer in a flash memory device results in a substantial improvement in the erasetime push-out and reduces excess charge loss normally associated with hot-electron devices.

Method of reducing hot-electron degradation in semiconductor devices

A process for removing a liquid phase epitaxial layer of material from a wafer substrate is disclosed. An etch melt is provided which is substantially the same as that used to grow the epitaxial layer on the wafer surface. The temperature of the etch melt is adjusted such that it exceeds an equilibrium temperature of the epitaxial layer, and lies below an equilibrium temperature of the substrate, such that the epitaxial layer is etched away without affecting the substrate material. The wafer is immersed and maintained within the melt until the epitaxial layer is removed. The wafer may then be reused without repolishing.

Process for removing a liquid phase epitaxial layer from a wafer

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La Honda, CA, United States of America

Baylor B Triplett