Infineon Technologies Ag

Infineon Technologies Americas Corp.

Wolfspeed, Inc.

Bayaner Arigong

Haedong Jang

Richard Wilson

Frank Trang

Timothy Canning

Rongguo Zhou

David Seebacher

Qianli Mu

Christian Schuberth

Bjoern Herrmann

E J Hashimoto

Ej Hashimoto

An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

RF power amplifier with combined baseband, fundamental and harmonic tuning network

A phase shifter having a four port hybrid coupler is provided. The four port hybrid coupler has first and second input ports and first and second output ports. The four port hybrid coupler is configured to shift the phase of an RF signal as between the first and second input ports. First and second active semiconductor devices are connected to first and second output ports. The first and second active semiconductor devices are configured to change the phase shift of the RF signal as between the first and second input ports based upon a varying voltage.

Reflection type phase shifter with active device tuning

An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

RF amplifier with dual frequency response capacitor

A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

An amplifier circuit includes an RF input port, an RF output port, a reference potential port, and an RF amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the RF output port. A first inductor is electrically connected in series between the first output terminal and the RF output port, a first LC resonator is directly electrically connected between the first output terminal and the reference potential port, and a second LC resonator is directly electrically connected between the first output terminal and the reference potential port. The first LC resonator is configured to compensate for an output capacitance of the RF amplifier at a center frequency of the RF signal. The second LC resonator is configured to compensate for a second order harmonic of the RF signal.

Compact class-F chip and wire matching topology

A power amplifier includes an outphasing amplifier. The outphasing amplifier includes a first amplifier and a second amplifier, and is configured to provide a first amplified RF signal and a second amplified RF signal that is phase shifted from the first amplified RF signal. The power amplifier further includes an output circuit that is configured to combine RF power of the first and second amplified RF signals at a summing node. The output circuit includes a first branch connected between the first amplifier and a summing node and a second branch connected between the second amplifier and the summing node. The first and second branches are each configured to match an output impedance of the first and second amplifiers and to phase shift the first and second amplified RF signals for an outphasing operation using common reactive components for the match of the output impedance and the outphasing operation.

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Bayaner Arigong