Yangtze Memory Technologies Co., Ltd.

Bater Chelon

Wei Liu

Siping Hu

Shiqi Huang

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a plurality of first NAND memory strings and a plurality of first BLs. At least one of the first BLs may be conductively connected to a respective one of the first NAND memory strings. The first semiconductor structure also includes a plurality of first conductor layers, and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs and a plurality of first word line bonding contacts conductively connected to the first conductor layers. A second semiconductor structure includes a plurality of second NAND memory strings and a plurality of second BLs.

Method for forming a three-dimensional (3D) memory device having bonded semiconductor structures

Bonded three-dimensional memory devices having bonding layers

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure, which includes a plurality of first NAND memory strings, a plurality of first BLs, at least one of the first BLs being conductively connected to a respective one of the first NAND memory strings; and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs, respectively. The 3D memory device further includes a second semiconductor structure, which includes a plurality of second NAND memory strings, a plurality of second BLs, at least one of the second BLs being conductively connected to a respective one of the second NAND memory strings, and a second bonding layer having a plurality of second bit line bonding contacts conductively connected to the plurality of second BLs, respectively.

Bonded three-dimensional memory devices and methods for forming the same

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first memory stack having a plurality of first conductor layers and a first bonding layer having a plurality of first word line bonding contacts conductively connected to the plurality of first conductor layers, respectively. A second semiconductor structure includes a second memory stack having a plurality of second conductor layers and a second bonding layer having a plurality of second word line bonding contacts conductively connected to the plurality of second conductor layers, respectively. The 3D memory device also includes a bonding interface between the first bonding layer and the second bonding layer, at which the first word line bonding contacts are in contact with the second word line bonding contacts.

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Wuhan, China

Bater Chelon