Commissariat a L'energie Atomique Et Aux Energies Alternatives

Centre National De La Recherche Scientifique

Bastien Letowski

Julie Widiez

Jean-Christophe Crebier

Nicolas Rouger

A process for fabricating at least one elementary heterostructure includes producing a heterostructure comprising at least one semiconductor structure of resistivity higher than or equal to 1 &#x3a9;.cm located between two electrically conductive structures of resistivity lower than or equal to 0.1 &#x3a9;.cm; cutting the heterostructure by electrical discharge machining so as to define at least the elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of the electrically conductive structures or of the total thickness of the electrically conductive structures.

Process for fabricating a heterostructure comprising a conductive structure and a semiconductor structure and including a step of electrical discharge machining

An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

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Grenoble, France

Bastien Letowski