Ctf Solar Gmbh

China Triumph International Engineering Co., Ltd.

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

China Thumph International Engineering Co., Ltd.

Smit Thermal Solutions B.v.

China Triumpf International Engineering Co. Ltd.

Bastian Siepchen

Shou Peng

Michael Harr

Xinjian Yin

Krishnakumar Velappan

Christian Drost

Bettina Späth

Ganhua Fu

Christian Kraft

Christoph Metzner

Olaf Zywitzki

Henry Morgner

Torsten Werner

Daniel Hirsch

Ludwig Decker

Zhizhong Liao

Marcel Mischke

Daniele Menossi

Stefan Rau

Gerard Kaper

Wiro Zijlmans

The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSeTelayer having a first amount wof selenium in it, forming a second CdSeTelayer having a second amount wof selenium in it and forming a third CdSeTelayer having a third amount wof selenium in it. The second amount wlies in the range between 0.25 and 0.4, whereas each of the amounts wand wlies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSeTelayers is equal to or higher than 1.45 eV and the energy gap in the second CdSeTelayer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSeTelayers.

Method for producing a double graded CdSeTe thin film structure

The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Method for determining a substrate position in a closed chamber and apparatus for performing the method

Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

Thin film device with additional conductive lines and method for producing it

The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Method for testing a standard interface and interface-tester

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Method to deposit thin film high quality absorber layer

A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Method for depositing a CdTe layer on a substrate

A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdClactivation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.

Method for producing thin-film solar cells

The present invention concerns a method for the manufacture of the first layer of a back contact layer for thin-layer solar cells in superstrate configuration. In the prior art, this layer is deposited as a compound, for example as a layer of SbTe. In accordance with the invention, however, a tellurium-rich surface layer of the cadmium telluride layer is produced, on which a first material is deposited which is capable of forming an electrically conductive second material with tellurium and of producing the second material by reaction of the first material and tellurium in the surface layer. The second material forms the first layer of the back contact layer.

Method for producing the rear contact layer for CdTe thin-film solar cells

The invention relates to a method for conditioning the CdTe layer of CdTe thin-film solar cells without the use of CdCl2. Calcium tetrachlorozincate (CaZnCl4) is to be used instead of CdCl2 for activation, and the process parameters that have proven themselves over time are to be kept. The method involves the activation of the CdTe layer of semi-finished thin-film CdTe solar cells; calcium tetrachlorozincate is applied to the CdTe layer () and the semi-finished thin-film CdTe solar cell subsequently undergoes a heat treatment. The calcium tetrachlorozincate layer is preferably applied via methods from the prior art, for instance roller coating with an aqueous or methanolic salt solution, spraying on an aqueous or methanolic salt solution, an aerosol coating or a dipping bath.

Method of conditioning the CdTe layer of CdTe thin-film solar cells

Growing community of inventors

Dresden, Germany

Bastian Siepchen