Asml Netherlands B.v.

Bastiaan Onne Fagginger Auer

Hugo Augustinus Joseph Cramer

Anagnostis Tsiatmas

Patrick Warnaar

Hendrik Jan Hidde Smilde

Armand Eugene Albert Koolen

Davit Harutyunyan

Mariya Vyacheslavivna Medvedyeva

Paul Christiaan Hinnen

Nitesh Pandey

Zili Zhou

Martinus Hubertus Maria Van Weert

Arie Jeffrey Den Boef

Simon Gijsbert Josephus Mathijssen

Sebastianus Adrianus Goorden

Markus Gerardus Martinus Maria Van Kraaij

Alok Verma

Gerbrand Van Der Zouw

Seyed Iman Mossavat

Remco Dirks

Shu-jin Wang

Bert Verstraeten

Samee Ur Rehman

Martijn Maria Zaal

Johan Maria Van Boxmeer

Joannes Jitse Venselaar

Janneke Ravensbergen

Alexandru Onose

Thaleia Kontoroupi

Xiaoxin Shang

Jolanda Theodora Josephina Schmetz-Schagen

Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.

Method of calibrating a plurality of metrology apparatuses, method of determining a parameter of interest, and metrology apparatus

In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Metrology method and apparatus, substrate, lithographic system and device manufacturing method

An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

Method and apparatus for measuring a parameter of interest using image plane detection techniques

A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.

Metrology apparatus, lithographic system, and method of measuring a structure

Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.

Method of optimizing a metrology process

Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.

Method of determining an optimal focus height for a metrology apparatus

A target formed on a substrate, the target having: an alignment structure; and a metrology structure; wherein the alignment structure comprises structures that are arranged to generate a beat pattern when the alignment structure is illuminated with source radiation. Advantageously, when the target is illuminated, the beat pattern that appears in an image of the target allows the target to be easily identified using a pattern recognition technique.

Beat patterns for alignment on small metrology targets

Disclosed is a method of measuring a parameter of interest relating to a structure on a substrate, and associated metrology apparatus. The method comprises determining a correction to compensate for the effect of a measurement condition on a measurement signal from a plurality of measurement signals, wherein each of said measurement signals results from a different measurement of the structure performed under a different variation of said measurement condition. The correction is then used in a reconstruction of a mathematical model of said structure to suppress an influence of variations of said measurement condition on the reconstruction.

Method and apparatus for measuring a parameter of a lithographic process, computer program products for implementing such methods and apparatus

A method for monitoring a characteristic of illumination from a metrology apparatus includes using the metrology apparatus to acquire a pupil image at different focus settings of the metrology apparatus and calculating an asymmetry value for each acquired pupil image, where each pupil image is acquired on at least one edge of a target of a substrate.

Method for monitoring a characteristic of illumination from a metrology apparatus

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Eindhoven, Netherlands

Bastiaan Onne Fagginger Auer