Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Université Grenoble Alpes

Institut Polytechnique De Grenoble

Centre National De La Recherche Scientifique-cnrs

Bassem Salem

Thomas Ernst

Jean-Michel Hartmann

Thierry Baron

Pierre Ferret

Pascal Gentile

Etienne Eustache

Franck Bassani

Mohamed-Aymen Mahjoub

Clément Lausecker

A method for the nanoscale etching of a layer of GeSnon a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of GeSnusing a mixture comprising dichlorine (Cl) and dinitrogen (N) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of GeSnon the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of GeSnaccording to the etching method. A conduction channel made of GeSnfor a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of GeSn.

Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor

Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes

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Sassenage, France

Bassem Salem