Broadcom Corporation

Bassem F Radieddine

Myron Buer

Douglas D Smith

Laurentiu Vasiliu

Mark Slamowitz

A one-time programmable device includes a controller, a protection system, a static storage element and a latch, which can be referred to as a latch-based one-time programmable (OTP) element. In one example, the static storage element includes a thin gate-oxide that acts as a resistance element, which, depending on whether its blown, sets the latch into one of two states.

Method using a one-time programmable memory cell

System and method using a one-time programmable memory cell

Systems and methods are disclosed for a power-on reset used in low power supply voltage applications (i.e., having a full operating power supply voltage of less than about 2.0 volts). One embodiment of the reset circuit comprises a differential voltage generation circuit and an amplifier circuit. The differential voltage generation circuit is adapted to create two voltages changing at different rates. The amplifier circuit is adapted to amplify a difference between the two voltages.

Power-on reset circuit for use in low power supply voltage applications

The present invention relates to a programmable memory device and a method of setting a state for a programmable memory device. In at least one embodiment, the memory device comprises at least a level shifter adapted to stand off a high programing voltage to at least one fuse element in the memory device, wherein the high programming voltage is used to set a state of the memory device.

Memory cell with fuse element

The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high voltage switch. The memory device includes a plurality of one time programmable memory cells arranged in an array and adapted to be programmed using a high voltage, wherein each of the memory cells includes at least one storage element and two gated fuses connected to the storage element. A high voltage switch is connected to at least one of the memory cells and is adapted to switch in a high voltage.

High voltage switch circuitry

The present invention relates to a programmable memory cell and a method of setting a state for a programmable memory cell. The memory cell includes two thin gated fuses adapted to set the state of the memory cell. A level shifter device is connected to the gated fuses and is adapted to stand off a high voltage when setting the state of the memory cell. At least one switch transistor is connected to at least the level shifter device and is adapted to select at least one of the gated fuses, enabling a high voltage to be communicated thereto, thus setting the state of the memory cell.

The present invention relates to a method of setting a state of a one-time programmable memory device having at least one memory cell with a thin gate-ox fuse element having an oxide of about 2.5 nm thick or less using a high voltage switch. The method comprises switching in a high programming voltage into the memory cell using such high voltage switch, setting the state of the thin gate-ox fuse element.

The present invention relates to a one-time programmable memory cell and a method of setting a state for a one-time programmable memory cell. The memory cell includes a storage element adapted to store data and two thin gated fuses coupled to the storage element, adapted to set the state of the memory cell. A level shifter device is connected to the gated fuses and is adapted to stand off a high voltage when setting the state of the memory cell. At least one switch transistor is connected to at least the level shifter device and is adapted to select at least one of the gated fuses, enabling a high voltage to be communicated thereto, thus setting the state of the memory cell. A programming device is coupled to the storage element and is adapted to keep at least one of the gated fuses low when setting the state of the memory cell.

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Aliso Viejo, CA, United States of America

Bassem F Radieddine