Nxp Usa, Inc.

Freescale Semiconductor,inc.

Basim H Noori

Jeffrey Kevin Jones

Gerard J Bouisse

Jean-Christophe Nanan

Jaime A Pla

Michael E Watts

David Paul Lester

Mario M Bokatius

Lei Zhao

David F Abdo

Travis A Barbieri

Lakshminarayan Viswanathan

Fernando A Santos

Pierre Marie Jean Piel

Youri Volokhine

Mohd Salimin Sahludin

Viswanathan Lakshminarayan

Pierre Marie J Piel

Stephen C Cripps

Christopher J Roff

Apparatus are provided for amplifier systems and related circuits are provided. An exemplary circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first circuit output, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.

Amplifiers and related integrated circuits

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof

Amplfiers and related integrated circuits

An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.

Broadband radio frequency power amplifiers, and methods of manufacture thereof

Apparatus are provided for amplifier systems and related circuits are provided. An exemplary circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.

An RF circuit includes a first dielectric material, a signal line and a bias line over a first surface of the first dielectric material, a conductive layer over a second surface of the first dielectric material, and a second dielectric material over the conductive layer. The first and second dielectric materials have different dielectric constants. The conductive layer includes a ground plane over which the signal line is formed. A conductive material void, with which a section of the bias line is aligned, is present in the second conductive layer. The RF circuit further includes a mounting area for an RF device. First ends of the signal line and the section of the bias line are located proximate to the mounting area to enable the signal line and the bias line to be electrically coupled with one or more leads of the RF device.

RF circuit with multiple-definition RF substrate and conductive material void under a bias line

A high frequency amplifier includes a high frequency amplifier transistor integrated in a first die of a first semiconductor technology and a matching circuit. The high frequency amplifier transistor has an input terminal, an output terminal and a reference terminal. The reference terminal is coupled to a reference potential. The matching circuit includes at least a first inductive bondwire, a second inductive bondwire and a capacitive element arranged in series with said inductive bondwires. The capacitive element is integrated in a second die of a second semiconductor technology different from the first semiconductor technology. The second semiconductor technology includes an isolating substrate for conductively isolating the capacitive element from a support attached at a first side to the second die. The capacitive element includes a first plate electrically coupled to a first bondpad of the second die and a second plate electrically coupled to a second bondpad of the second die.

High frequency amplifier

In general the embodiments described herein can provide alternating-current (AC) resonating filters. These resonating filters comprise a transmission line, a first resonator, and a second resonator. The first resonator is configured to block AC signals in a first frequency range, while the second resonator is configured to block AC signals in a second frequency range, where the second frequency range is higher than the first frequency range. The transmission line has a first node coupled to an AC source, and the first resonator is coupled to the transmission line a first distance from the first node, and the second resonator is coupled to the transmission line a second distance from the first node, where the second distance is greater than the first distance. When so configured the resonating filter can effectively block signals in multiple selected frequency bandwidths.

Resonating filter and method thereof

The present disclosure presents a device and method for connecting an RF generator to a coaxial conductor. The device includes a substrate, a radio frequency generator on the substrate, and a coaxial conductor coupled to a first surface of the substrate. The coaxial conductor includes a conductive core and a conductive shield around the conductive core and is configured to transmit the radio frequency signal to a radiation device. The device includes a cap coupled to the substrate and extending from a second surface of the substrate opposite the first surface. The cap includes an outer wall and a center post. The outer wall is electrically connected to the conductive shield of the coaxial conductor and the center post is electrically connected to the conductive core of the coaxial conductor. An output pad of the radio frequency generator is electrically connected to the conductive core.

Device and method for connecting an RF generator to a coaxial conductor

A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.

Radiation devices

An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.

Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof

Apparatus are provided for amplifier systems and related integrated circuits are provided. An exemplary integrated circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the integrated circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the integrated circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.

A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.

Growing community of inventors

Chandler, AZ, United States of America

Basim H Noori