Globalfoundries Inc.

Basab Banerjee

Hong Yu

Jianwei Peng

Hsien-Ching Lo

Zhao Lun

Tao Han

Byoung-Gi Min

Wen Zhi Gao

A method of forming spacers and the resulting fin-shaped field effect transistors are provided. Embodiments include forming a silicon (Si) fin over a substrate; forming a polysilicon gate over the Si fin; and forming a spacer on top and side surfaces of the polysilicon gate, and on exposed upper and side surfaces of the Si fin, the spacer including: a first layer and second layer having a first dielectric constant, and a third layer formed between the first and second layers and having a second dielectric constant, wherein the second dielectric constant is lower than the first dielectric constant.

Multi-layer spacer used in finFET

Growing community of inventors

Ballston Lake, NY, United States of America

Basab Banerjee