American Electronic Laboratories, Inc.

Ael Defense Corp.

Baruch Even-Or

Eitan Gertel

Raymond S Markowitz

Robert L Rauck

Walter Bohlman

An impedance matching device that is particularly suited for high speed, high power applications is disclosed. The impedance matching devices employ magnetic coupling allowing their usage in a 'frequency-agile' environments such as communication as well as communication jamming and deception techniques without creating high current, high voltage and thermal conditions that might otherwise damage the related switching devices. The impedance matching device provides a predetermined impedance to transform a load impedance Z.sub.L into a desired characteristic impedance Z.sub.0 over a frequency range having a lower and an upper band. The device comprises one or more first and second inductive components. Each of the first inductive components has an impedance characteristic associated with said lower band, whereas each of the second inductive component has an impedance characteristic associated with the upper band. The device further comprises switch means having an active and an inactive state and being of a predetermined number at least equal to the predetermined number of second components. Each of the switch means in its active state bypassing its corresponding second component and effectively shorting out its respective first component.

Multilayer magnetically coupled suspended stripline for impedance

An electronic switch for selectably switching a high frequency signal between an input and an output. The switch comprises a switching element comprising at least two PIN diodes connected in series-opposed configuration between said input and said output. The switching element has a low impedance when the diodes are forward biased and a substantially higher impedance when the diodes are reverse biased. A bias circuit is connected to the diodes for selectably applying a forward bias current to the diodes for forward-biasing said diodes and a reverse bias voltage to the diodes for reverse-biasing said diodes. A bias current return circuit provides a high-speed return path for the forward bias current from the diodes to a return when said diodes are forward biased. A switch associated with the bias circuit and a resistive load are provided for applying the forward bias current to the load when the reverse bias voltage is applied to the diodes.

Ultra fast pin diode switch

A transmission line comprising first and second planar dielectric layers. Each layer has a first surface and a second surface. The first surface of each layer has a plurality of electrical conductors thereon defining a center conductor and at least two other conductors, one on either side of and spaced from the center conductor. The second surface of each layer has an electrically conductive ground plane thereon. The first surface of one layer is opposed to the first surface of the other layer, with the conductors on the first surface of the one layer being in registry with and in physical and electrical contact with the conductors on the first surface of the other layer. A plurality of conductors are provided for making electrical contact with the ground planes and each of the at least two conductors for causing the ground planes and each of the at least two conductors to be at substantially the same electrical potential.

Triplet plated-through double layered transmission line

A coherent optical RF memory has an input circuit for receiving RF input signals having wideband frequency content. An electronically tuned frequency selector selects from the RF input at least one desired RF signal having a desired frequency content for storing in memory. A first transducer responsive to the frequency selector converts the at least one desired RF signal into an optical signal representative of the RF signal. The optical signal is stored in an optical storage device. A second transducer responsive to the optical storage device converts the stored optical signal back to an RF signal, forming a recirculating loop. The desired signal is automatically self-equalized as it recirculates in the loop in order to avoid oscillation while maintaining signal coherency. The desired signal may be used for jamming or deception in electronic warfare (EW) or electronic intelligence (ELINT) systems.

Self-equalizing coherent optical RF memory

A broadband electronic switch has first and second field-effect transistors connected in common-source cascade configuration defining a signal path for a signal to be switched from the drain electrode of the first transistor through the common-source connection to the drain electrode of the second transistor. Each transistor has a conductive state and a non-conductive state. A reverse recovery diode is connected from the source electrode to the drain electrode of each transistor. The switch includes a switch control coupled to the first and second transistors for selectably placing both transistors in the conductive and non-conductive states. The switch control has non-inductive elements for attenuating signal leakage from the signal path into the switch control when the transistors are in the non-conductive state and for minimizing transistor parasitic capacitances during transition from the conductive to non-conductive states to minimize transition time.

Broadband electronic switch

A spiral antenna has a plurality of interleaved radiating elements winding outwardly in a spiral pattern about a common axis. The spiral pattern is deformed at outer regions of the antenna to define one or more circumferentially disposed concavities in the body of the antenna. Each concavity is adapted to receive another antenna such as a spiral antenna or horn antenna.

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Chalfont, PA, United States of America

Baruch Even-Or