Massachusetts Institute of Technology

Corning Incorporated

Barton G Lane, Iii

Donna L Smatlak

Leslie Bromberg

Daniel R Cohn

Keith Leonard House

Herbert H Sawin

William Brashear Mattingly, Iii

William C Guss

This invention relates to a device for performing plasma chemical vapor deposition (PCVD) for producing coated glass tubes for the drawing of optical fibers. This invention further relates to a device that uses a microwave applicator, and the applicator itself with a profile that allows for a uniform coating across a greater length of the glass tube.

Device for producing PCVD coated glass tubes for the drawing of optical fibers

A method and apparatus for the pyrolytic destruction or synthesis of gases via a highly tunable combination of radio frequency heating and electron beam irradiation is disclosed. The method is appropriate for destroying toxic gases emanating from hazardous wastes and for synthesizing new molecules from the molecules of a gas. The method is also appropriate for creating scavenger gases and hot gases with large enthalpy for use in sterilization procedures, for example. Embodiments are disclosed employing inductive or direct waveguide/cavity coupling of radio frequency power to the gas. In embodiments of the invention, magnetic fields are used to modify the paths of the electrons in the beam to facilitate tuning and improve the energy efficiency of the system. In a two-stage system, solid and/or liquid wastes are first heated in order to vaporize the toxic materials. Then, the gases produced in the first stage are destroyed by the combination of radio frequency heating and electron beam irradiation of the invention.

Tunable plasma method and apparatus using radio frequency heating and

A toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber in which a specimen to be processed is disposed on an electrode in a specimen chamber. Microwaves and gaseous reactants are introduced into the plasma generating chamber. A plasma discharge occurs in which high energy electrons are confined in a plasma source region extending between a magnetic mirror formed in the specimen chamber out of line-of-sight to the wafer(s) when disposed on the electrode. A baffle region formed between the two chambers prevents microwaves from entering the specimen chamber. The reactor is particularly suitable for etching or depositing films on semiconductor substrates, since the sensitive substrates are not exposed to the high energy ions and/or photons of the source region.

Toroidal electron cyclotron resonance reactor

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Belmont, MA, United States of America

Barton G Lane, Iii