Saras Micro Devices, Inc.

Bartlet H DeProspo

Urmi Ray

Ryan Wong

Jose F Solis Camara

Carlos Riera

An integrated passive device has a device core of a first metal material and defined by a first side and a second side. Conducting polymer layers are disposed on each of the first side and the second side, and a pattern of one or more direct recesses to the device core are defined in the conducting polymer layers. Bonding material layers are on at least selected areas of the device core that are generally coextensive with the pattern of one or more direct recesses in the conducting polymer layers. First conductive structures of a second metal material different from the first metal material extend from the first side and the second side of the device core. Each of the conductive structures are bonded to a respective one of the bonding material layers. An insulating dielectric encapsulates at least the device core and the conducting polymer layers.

Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor device

A package substrate for a semiconductor device includes a first substrate core and an inductor embedded in the first substrate core, the inductor including a magnetic core embedded in the first substrate core and a conductive winding surrounding the magnetic core, the conductive winding including one or more first segments defined by metal patterning on the first substrate core and one or more second segments defined by one or more conductive vias extending through the first substrate core. The package substrate may further include a capacitor embedded in the first substrate core and/or in a second substrate core vertically stacked with the first substrate core.

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Chandler, AZ, United States of America

Bartlet H DeProspo