Spin Transfer Technologies, Inc.

Spin Memory, Inc.

Bartek Kardasz

Mustafa Pinarbasi

A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.

Memory cell having magnetic tunnel junction and thermal stability enhancement layer

A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be include a layer of CoFeB ferromagnetic material.

A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the free layer. The design provided enables a deterministic final state for the storage layer and significantly improves the tunneling magnetoresistance value and switching characteristics of the magnetic tunnel junction for MRAM applications.

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Pleasanton, CA, United States of America

Bartek Kardasz