Asml Netherlands B.v.

Bart Peter Bert Segers

Frank Staals

Everhardus Cornelis Mos

Wim Tjibbo Tel

Emil Peter Schmitt-Weaver

Reiner Maria Jungblut

Carlo Cornelis Maria Luijten

Yichen Zhang

Miguel Garcia Granda

Hyunwoo Yu

Petrus Gerardus Van Rhee

Maria Kilitziraki

Patricius Aloysius Jacobus Tinnemans

Patrick Warnaar

Marinus Jochemsen

Xing Lan Liu

Simon Hendrik Celine Van Gorp

Grzegorz Grzela

Eric Jos Anton Brouwer

Pierre-Yves Jerome Yvan Guittet

Léon Maria Albertus Van Der Logt

Steven Erik Steen

Anton Bernhard Van Oosten

Gerardus Carolus Johannus Hofmans

Paulus Jacobus Maria Van Adrichem

Arjan Gijsbertsen

Hubertus Antonius Geraets

Elliott Gerard Mc Namara

Daan Maurtis Slotboom

Fahong Li

Natalia Viktorovna Davydova

Cornelis Andreas Franciscus Johannes Van Der Poel

Mohamed Ridane

A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Computational metrology

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

Metrology apparatus and method for determining a characteristic relating to one or more structures on a substrate

A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

Method and apparatus for determining a fingerprint of a performance parameter

A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w, w) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method

A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed () with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve () is obtained in advance by exposing similar targets on FEM wafers (). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point () is recorded, where all the calibration curves intersect. When a new calibration curve is measured (), the anchor point is used to produce an adjusted updated calibration curve (') to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS.-) uses two aberration settings (+AST, &#x2212;AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS.-) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method

A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.

Lithographic apparatus and method

A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50&#xd7; the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

Lithographic apparatus and device manufacturing method

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Tessenderlo, Belgium

Bart Peter Bert Segers