Intel Corporation

Magnesys

Barry R Lieberman

Arun Ramamoorthy

Alan R Stivers

Guido Galli

Shoudeng Liang

Hsing-Chien (Andy) Ma

Alexander A Grillo

A reticle carrier used in semiconductor manufacture. The carrier includes a bottom cover and a top cover having a transparent window. A protective lid may also be included. The box includes ports to allow nitrogen gas to enter and purge the inside. The transparent window is used for inspection and photochemical clean. However, since no material is available which can suitably handle smaller wavelength radiation, the reticle is removed from the carrier when exposure at these wavelengths is required.

Euv reticle carrier with removable pellicle

A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.

Photolithographic mask fabrication

A bubble generator for use in a bubble memory device combines a nucleating generator and replicating generator in a unified structure with first and second hairpins disposed at respective first and second regions to define nucleation and replication sites. The conductor layer is configured such that the same polarity of current flow causes magnetic fields of opposite sense at the nucleation and replication sites. The nucleation site is used only to generate the seed bubble required at the replication site. Once the seed bubble is present, the replication site is utilized to produce the data stream. The nucleation and replication sites are preferably spaced apart with a propagation track extending from the former to the latter, and the first and second hairpins are series-connected with the series connection crossing the propagation path. The hairpins are preferably directed oppositely so that when the rotating field is in the right phase for replication, it is 180.degree. out of phase for nucleation.

Combined nucleate-replicate single wall domain generate structure

Growing community of inventors

Los Altos, CA, United States of America

Barry R Lieberman