North American Philips Corporation

U.S. Philips Corporation

Varian Associates, Inc.

Barry M Singer

Satyendranath Mukherjee

Gert W Bruning

Emil Arnold

Yannick J Thefaine

Amos Picker

Allan I Carlson

Joseph J Lalak

Johnny K Sin

Thomas H Conklin

Andrew L Dalisa

Raj Jayaraman

Rajsekhar Jayaraman

A power integrated circuit includes a substrate with an overlying epitaxial surface layer of opposite conductivity type. A semiconductor power device, such as a high-power diode or lateral MOS transistor, is located in the epitaxial layer and forms a p-n junction diode with the substrate. The power integrated circuit also includes a separate semiconductor well region in the epitaxial layer, in which one or more low-power semiconductor circuit elements are formed. In order to minimize the problem of latch up in the low-power circuit elements due to the injection of minority carriers from the substrate, the power integrated circuit is provided with a collector region and an isolation region between the power device and the well region having the low-power circuit elements.

Power integrated circuit with latch-up prevention

A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.

Semiconductor switch with parallel DMOS and IGT

Semiconductor switch with parallel lateral double diffused MOS

An image intensifier tube comprising an input screen assembly which includes a photosensitive semiconductor wafer having a substrate of one conductivity type material forming a plurality of P-N junctions with a planar array of mutually isolated islands of opposite conductivity type material, the islands protruding substantially equal distances from a common surface of the substrate, an opaque film of resistive material overlying the exposed areas of the islands and the common surface of the substrate, a layer of electroluminescent material disposed in abutting relationship with the distal ends of the islands and a layer of photoemissive material disposed in axially aligned relationship with the electroluminescent layer.

Image intensifier tube

A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. The doping concentration and thickness of the epitaxial surface layer are selected in accordance with the Reduced Surface Field (RESURF) technique. A highly-doped buried region of the second conductivity type is located beneath the base region of the device and is sandwiched between the epitaxial buried layer and the epitaxial surface layer. The advantages of such a device include a substantially reduced 'on' resistance, a more compact and flexible configuration, improved switching characteristics, reduced base device current requirements, and improved isolation. The device may be further enhanced by providing a buried annular region of the first conductivity type around and in contact with the buried region, and a surface-adjoining annular region of the first conductivity may be provided adjacent the base region.

Combined bipolar-field effect transistor resurf devices

A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a floating semiconductor layer of opposite conductivity type to that of the channel region is provided between the intermediate layer and the substrate of the device. Both the intermediate layer and the substrate are relatively lightly doped, to effectively isolate the floating layer from above and below. This structure substantially improves the operating chartacteristics of the device, thus permitting operation in both the source-follower and common-source modes, while also providing a compact structure which features a relatively low normalized 'on' resistance.

Conductivity-enhanced combined lateral MOS/bipolar transistor

An apparatus and technique are described for storing a latent radiation image on a photoconductor by way of charge produced on the photoconductor and absorption of light from an object transmitted onto the photoconductor. Read out is provided by scanning a light source over the photoconductor to create a photocurrent which activates a CRT read out device or is stored in an image recording system.

Method and apparatus for displaying and reading out an image

A lateral junction field effect transister device includes both a surface semiconductor layer located between the gate and drain contact regions of the device and a buried semiconductor layer which extends beneath at least the drain contact region and the surface semiconductor layer of the device. The buried layer may be in the form of a continuous layer extending beneath the gate, source, and drain contact regions of the device as well as the surface semiconductor layer, or it may be provided in annular form with an aperture beneath the source and gate regions. The annular central buried layer configuration may further include an additional buried layer portion extending beneath the source region of the device. Devices having buried and surface layers in accordance with the invention feature improved high-voltage breakdown characteristics, enhanced conductivity in the 'on' state, and the ability to operate in the source-follower mode.

Lateral junction field effect transistor device

A pyroelectric vidicon has an improved signal-to-noise ratio by essentially eliminating pedestal noise and using signal gain to overcome preamplifier noise. Pedestal noise is substantially eliminated by charging the target, during the flyback read period, down to a small fixed value above the quiescent value. This is accomplished by setting the cathode potential, during the flyback read period, at a value below the reference value. The time duration of the flyback read period is such that the target is charged down to a value which is still above the quiescent value.

Pyroelectric vidicon with improved signal-to-noise ratio

An electrophoretic display device in which an colloidal suspension of pigment particles is contained between a pair of electrodes, and means are provided in the structure of the electrodes of the cell for the establishment of a voltage threshold for the transport of pigment particles. This threshold permits the changing of the spatial distribution of pigment particles in specifically defined regions of the display cell.

X-Y addressable electrophoretic display device with control electrode

A method of fabricating a pyroelectric vidicon target wherein a layer of pyroelectric material is attached to a substrate, reduced in thickness, reticulated, covered with an electron permeable support layer, removed from the substrate, and covered with a layer of silicon oxide on the side scanned by the electron beam.

Method of reticulating a pyroelectric vidicon target

X-ray image intensifier tube comprises a silicon diode array imaging target which, on the electron bombarded side, is provided with a deeply diffused phosphorus n.sup.+ layer covered with a metallic buffer layer.

Variable gain X-ray image intensifier tube

A method of reducing the thickness of a wafer of fragile material, e.g. pyroelectric material, by placing the wafer, supported only at its rim, in a holder filled with a non-corrosive liquid. The holder with the exposed surface of wafer is placed in an etch bath to reduce the thickness of the wafer. The wafer is removed from the etch bath, without removing it from the holder, to measure its thickness, using its index of refraction, which is facilitated by the presence of a bubble in the non-corrosive liquid.

Method of reducing the thickness of a wafer of fragile material

In a pyroelectric vidicon, the target is covered with a layer of vacuum compatible material which has a high secondary emission coefficient, a low first cross-over and low conductivity to prevent decomposition of the target.

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New York, NY, United States of America

Barry M Singer