Kla Tencor Corporation

Real View Imaging Ltd.

Kla Corporation

Barry Loevsky

Amnon Manassen

Andrew V Hill

Vladimir Levinski

Roie Volkovich

Eran Amit

Carmel Rotschild

Nuriel Amir

Shaul Alexander Gelman

Tzahi Grunzweig

Shlomo Alon-Braitbart

Zeev Bomzon

Daria Negri

Yuri Paskover

Or Peleg

Avraham Bakal

Ari Krauss

A pupil tracking system including a light source for illuminating a viewer's eye, an aperture located to pass light from the light source after retro-reflection from the viewer's pupil, the aperture sized and shaped to pass the light from the light source and block at least a portion of other light arriving at the aperture, and a light sensor for tracking a location of a spot produced by the light from the light source which passed the aperture. Related apparatus and methods are also described.

Pupil tracking in an image display system

Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

Polarization measurements of metrology targets and corresponding target designs

A method for directing non-modulated light from a Spatial Light Modulator (SLM) and allowing through modulated light for producing an interference based holographic image, the method including illuminating the SLM with coherent light, thereby producing a mix of light modulated by the SLM and light not modulated by the SLM, and projecting the mix of the modulated light and the not modulated light along an optical axis onto a volume grating, wherein the volume grating directs the not modulated light away from the holographic image and allows through modulated light for producing the holographic image. Related apparatus and methods are also described.

Zero order blocking and diverging for holographic imaging

Focusing modules and methods are provided, which use a spatial light modulator (SLM) configured to yield a circumferentially sinusoidal pattern to derive focusing signals. For example, the SLM may comprise an optical chopper wheel made of a glass disc with a circumferentially sinusoidal pattern. The circumferentially sinusoidal pattern simplifies phase derivation from the focusing signal, providing a faster and more accurate estimation of defocusing. Signal detection may be carried out by a diode array that provides a more accurate signal faster, as well as a more differentiated analysis of the focusing signal than the one available by current technology.

Focusing modules and methods

A scatterometry measurement system includes an objective lens with a central obscuration and an illumination source configured to illuminate a scatterometry target through the objective lens with a first illumination beam at a first illumination angle and a second illumination beam at a second illumination angle in which the scatterometry target includes periodic structures located in at least two layers. The objective lens collects at least one diffracted order from the first illumination beam and at least one diffracted order from the second illumination beam such that the at least one diffracted order from the first illumination beam and the at least one diffracted order from the second illumination beam have a non-overlapping distribution in a portion of an imaging pupil plane not blocked by the central obscuration.

Scatterometry system and method for generating non-overlapping and non-truncated diffraction images

Metrology targets, design files, and design and production methods thereof are provided. Metrology targets comprising at least one reflection-symmetric pair of reflection-asymmetric structures are disclosed. The structures may or may not be periodic, may comprise a plurality of unevenly-spaced target elements, which may or may not be segmented. The asymmetry may be with respect to target element segmentation or structural dimensions. Also, target design files and metrology measurements of the various metrology targets are disclosed.

Metrology imaging targets having reflection-symmetric pairs of reflection-asymmetric structures

Scatterometry measurement systems, illumination configurations and respective methods are provided, which comprise illumination beams that have vertical projections on a target plane comprising both a parallel component and a perpendicular component, with respect to a target measurement direction. The illumination beams propagate at an angle to the plane defined by the measurement direction and a normal to the targets surface and generate diffraction images which are off-center at the imaging pupil plane. The eccentric diffraction images are spatially arranged to avoid overlaps and to correspond to measurement requirements such as spot sizes, number of required diffraction orders and so forth. The illumination beams may be implemented using illumination pupil masks, which provide a simple way to increase scatterometry measurements throughput.

An overlay target for a semiconductor device is disclosed. The overlay measurement target includes a first ring target located on a first measured layer of the semiconductor device. The first ring target includes a plurality of detectable features arranged in a circular manner having a first circumference. The overlay measurement target also includes a second ring target located on a second measured layer of the semiconductor device. The second ring target includes a plurality of detectable features arranged in a circular manner having a second circumference different from the first circumference. The displacement between a detected center of the first ring target and a detected center of the second ring target indicates an overlay error between the first measured layer and the second measured layer.

Detectable overlay targets with strong definition of center locations

Metrology targets and method of using the metrology targets for measurement of critical dimension, overlay or scanner aberration are disclosed. A target may include an unresolved grid having a plurality of lines spaced equally apart from each other according to a pre-determined pitch distance and at least one resolved feature tilted at an angle with respect to the unresolved grid. The method may indentify multiple regions of interest (ROIs) and determine a series of center points between the ROIs as the ROIs are being shifted. Critical dimension, overlay or scanner aberration may be calculated by analyzing the series of center points between the ROIs.

Measurement of critical dimension and scanner aberration utilizing metrology targets

A method and system for overly measurement is disclosed. The overlay measurement is performed based on moir&#xe9; effect observed between structured illumination grids and overlay targets. A structured illumination is used to illuminate a first overlay target and a second overlay target. Upon obtaining an image of the first overlay target illuminated by the structured illumination and an image of the second overlay target illuminated by the structured illumination, relative displacement between the first overlay target and the structured illumination and relative displacement between the second overlay target and the structured illumination are measured. The overlay between the first overlay target and the second overlay target is then measured based on their relative displacements with respect to the structured illumination.

Overlay measurement based on moire effect between structured illumination and overlay target

Various target configurations are disclosed. A target may include multiple lines spaced equally apart according to a pitch distance. The target may also include a first mark having at least one edge parallel to the lines, wherein the edge is configured to have at least one of: a periodically repetitive edge pattern having an amplitude that is a multiple of the pitch, a length that is a multiple of the pitch, or a thickness that is a multiple of the pitch. The target may further include a second mark having at least one edge parallel to the plurality of lines, wherein the edge is configured to have at least one of: a periodically repetitive edge pattern having a second amplitude that is a multiple of the pitch, a length that is a multiple of the pitch, or a thickness that is a multiple of the pitch.

Growing community of inventors

Yokneam Ilit, Israel

Barry Loevsky