Applied Materials, Inc.

Novellus Systems Incorporated

Siliconix Incorporated

Other

Barry Lee Chin

Peijun Ding

Tony P Chiang

Zheng Xu

Imran Hashim

Hong Zhang

Fusen E Chen

Gongda Yao

Gene Y Kohara

Hua Chung

Eliot K Broadbent

Christopher William Burkhart

Jeffrey C Benzing

Bingxi Sun

Everhardus P Van De Ven

Rajeev Bajaj

Terrance Y Lee

Ming Xi

Alfred W Mak

Jeong Soo Byun

Ken Kaung Lai

Ling Chen

Lawrence Chung-Lai Lei

John C Forster

Suraj Rengarajan

Tse-Yong Yao

Lawrence C Lane

Robin W Cheung

Xianmin Tang

Jianming Fu

Majeed Foad

Praburam Gopalraja

Ashok K Sinha

Timothy Weidman

Arvind Sundarrajan

Marc O Schweitzer

Timothy B Michaelson

Paul L Deaton

Edward J McInerney

Darryl Angelo

Richard A Blanchard

Yezdi N Dordi

Feng Quan Liu

Sasson Roger Somekh

Roderick Craig Mosely

Lawrence C Lei

Lakshmanan Karuppiah

Wen-Chiang Tu

Yuchun Wang

Liang Light Chen

Howard E Grunes

You Wang

Daniel A Carl

Rong Tao

Paul F Smith

Ivo J Raaijmakers

Peter W Hey

Michael J Wood

Ilyoung R Hong

Lorimer K Hill

James H Tsung

William H McClintock

Dan Carl

Imran Hasim

A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.

Printing a chemical mechanical polishing pad

A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with aD printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.

We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Method for depositing a diffusion barrier layer and a metal conductive layer

A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Apparatus for printing a chemical mechanical polishing pad

We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Printed chemical mechanical polishing pad

A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Atomic layer deposition apparatus

Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

Chemical planarization of copper wafer polishing

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Saratoga, CA, United States of America

Barry Lee Chin