Bell Telephone Laboratories

At&t Bell Laboratories

Other

Lucent Technologies Inc.

At+t Corp.

Case Western Reserve University

American Telephone & Telegraph Co., At&t Bell Laboratories

Barry Irwin Miller

Adam Heller

Karrie Jo Hanson

Leonard C Feldman

Ken M Takahashi

Joseph M Rosamilia

Barbara J Sapjeta

Akshay V Shah

Kuang-Chou Chang

Bruce A Parkinson

Joseph Shmulovich

Uziel Koren

Xu Shi

Dries Van Thourhout

Murray Robbins

Lawrence Warren Stulz

William Larry Wilson

Harry John Leamy

Avishay Katz

Liming Zhang

Arthur F Hebard

Weiguo Yang

Ronald J Nelson

William C Dautremont-Smith

Richard G Vadimsky

Gregg S Higashi

Cecilia Y Mak

James H McFee

Rafi Kalish

Pietro Arturo Giovanni Bernasconi

Rafael Kalish

Chih-Hsiao Chen

Robert Ewing Behringer

Kevin F Dreyer

Mingdeh Chien

Nicholas J Sauer

Maria S Kazacos

Hans J Lewerenz

Samih Tarabichy

Netzer Moriya

Jason O Fiering

A table and bench assembly that is configurable between a first position and a second position. In the first position the table and bench assembly is configured to provide a seating arrangement for a user. In the second position the table and bench assembly is configured to provide a combined seating and table arrangement for the user. A seating support member and tabletop support member are provided. A frame is further included wherein the frame further includes a pair of first leg members and a pair of second leg members. A seat brace member is provided and provides support for the seating support member. A seat member leg assembly includes a first portion and a second portion and is pivotally coupled to the seat brace member. The tabletop support member includes a plurality of longitudinal support members that further include at least one notch operable to engage a clamping member.

Integrated foldable table and bench assembly

A high power multi-frequency laser includes a laser cavity defined by reflective elements, a frequency routing device in the cavity comprising a plurality of frequency selective pathways, a first set of optical amplifiers optically coupled to a first end of the frequency routing device, and a second set of optical amplifiers optically coupling a second end of the frequency routing device and a first one of the reflective elements. The high power multi-frequency laser further includes a power combiner. The power combiner is optically coupled to the first set of optical amplifiers and a second one of the reflective elements and combines the outputs of the first set of optical amplifiers such that a common output for the multi-frequency laser is provided. The common output of the present invention provides a single output from the multi-frequency laser having a high output coupling efficiency.

High power multi-frequency laser

An electrode ( ) formed from a layer ( ) of tetrahedral carbon doped with nitrogen (taC:N) has both electroanalytical and electrosynthetic applications. The electrode includes a substrate material ( ), such as a silicon wafer, for supporting the taC:N layer. The electrode has good durability under a high anodic potential and high selectivity for conversion of chloride ions to chlorine, and for other electron transfer reactions. The electrode is readily formed at ambient temperatures by vacuum deposition of carbon and nitrogen ions on to the substrate. Masking of the substrate during deposition allows the formation of microelectrode arrays.

Nitrogen doped carbon electrodes

A unitary two-section semiconductor optical amplifier including a first active region, a second active region, and a passive region integrally connected between the first and second active regions to minimize optical loss therebetween. The arrangement of the two-section semiconductor optical amplifier is advantageous in that the gain in the first active region may be increased in order to maintain a substantially constant input power level to the second active region over a relatively wide dynamic range of input power levels to the first active region.

Two-section semiconductor optical amplifier

The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.

Etching of copper-containing devices

We have found that etching of a body that comprises exposed Si as well as a Ti-comprising metal layer (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100.degree. C. EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant.

Method of making an article comprising a silicon body

A graphite path is formed along the surface of a diamond plate, preferably a CVD diamond plate, by means of a laser or ion-implantation induced conductivity. The path advantageously can be the surface of a sidewall of a via hole drilled by the laser through the plate or a path running along a side surface of the plate from top to bottom opposed major surfaces of the plate. The graphite path is metallized, as by electroplating or electroless plating. In this way, for example, an electrically conducting connection can be made between a metallized backplane located on the bottom surface of the plate and a wire-bonding pad located on the top surface of the plate.

Metallized paths on diamond surfaces

It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.

Fabrication of electronic devices by electroless plating of copper onto

It has been found that fullerenes exhibit photoelectronic behavior such as photoconductivity or photovoltaic properties. Such behavior allows the fabrication of a variety of devices, such as solar cells and the use of various light-induced processes, such as the generation of a current by illumination of appropriate fullerene interfaces.

Devices involving the photo behavior of fullerenes

Processes are described for electroplating metal or alloy on superconducting oxides using either a nonaqueous bath or aqueous bath with suitably applied potential. Articles made in accordance with the electroplating process are also described.

Process for making metallized structure and article comprising structure

A method for revision arthroplasty for the removal of a loosened or defective prosthesis component anchored in a polymer cement set in a bone cavity. The method comprises exposing and disconnecting, if necessary, a connecting free end portion of the prosthesis component at an extremity of the bone cavity. The loosened or defective prosthesis is then removed out of the bone cavity from the extremity thereof. The cement is then removed from the cavity by the use of an instrument having a heated working end which is heated to a temperature exceeding the melting point of the cement whereby cement can be removed without perforating or damaging the bone.

Revision arthroplasty method and related instrument

A semiconductor liquid junction photocell having a photovoltaic junction between a p-type photoactive electrode comprising InP or Si and an electrolyte comprising a redox couple selected from the group consisting of V.sup.2+ /V.sup.3+, Nb.sup.4+ /Nb.sup.5+, and Ti.sup.3+ /Ti.sup.4+ produces a stable photocurrent output.

Semiconductor liquid junction photocell having a P-type photoactive

Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.

Gallium arsenide devices having reduced surface recombination velocity

We have found that a photoactive metal selenide film, such as CdSe, may be formed by cathodic eletrodeposition from a seleno-sulfite (SeSO.sub.3.sup.2-) solution without the need for a subsequent heat treating step which, it is hypothesized, was required by the simultaneous deposition of elemental selenium.

Method of making metal-chalcogenide photosensitive devices

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Middletown, NJ, United States of America

Barry Irwin Miller