Hewlett-packard Development Company, L.p.

Barry Craig Snyder

Ronald A Hellekson

Samson Berhane

Diane Lai

Hubert Vander Plas

Chien-Hua Chen

Alfred I-Tsung Pan

Hubert A Vander Plas

Ronnie Yenchik

Ron Allen Hellekson

An electronic device comprises a substrate comprising a first surface and a second surface, a substrate carrier comprising a first surface and a second surface, and an inorganic material bonding the second surface of the substrate and the second surface of the substrate carrier.

Bonded structures formed by plasma enhanced bonding

Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding

A method of manufacturing a microelectronics device is provided, wherein the microelectronics device is formed on a substrate having a frontside and a backside. The method comprises forming a circuit element on the frontside of the substrate from a plurality of layers deposited on the frontside of the substrate, wherein the plurality of layers includes an intermediate electrical contact layer, and forming an interconnect structure after forming the electrical contact layer. The interconnect structure includes a contact pad formed on the backside of the substrate, and a through-substrate interconnect in electrical communication with the contact pad, wherein the through-substrate interconnect extends from the backside of the substrate to the electrical contact layer.

Method of forming a through-substrate interconnect

A method of forming a through-substrate interconnect for a circuit element in a microelectronics device is provided. The device is formed on a substrate having a frontside and a backside, and includes a circuit element formed on the frontside of the substrate connected to a contact pad formed on the backside of the substrate by the through-substrate interconnect. The method includes forming a first interconnect structure extending into the substrate from the frontside of the substrate, at least partially forming the circuit element such that the circuit element is in electrical communication with the first interconnect structure, and forming a second interconnect structure extending into the substrate from the backside of the substrate after forming the first interconnect structure such that the second interconnect structure is in electrical communication with the first interconnect structure.

An apparatus incorporating multiple electrical interconnects extending through a substrate (e.g., a silicon wafer), and a method of forming the same. The electrical interconnects convey electrical signals through the substrate to structures mounted on the front side of the substrate. A conductive layer can be used to selectively distribute the electrical signals to the structures. Accordingly, it is not necessary to route electrical signals to the front side of the substrate in order to convey the signals to the structures. A structure can be coupled to multiple electrical interconnects in order to convey electrical signals along redundant paths through the substrate to the structure, improving reliability should one of the electrical interconnects fail.

Growing community of inventors

Bend, OR, United States of America

Barry Craig Snyder