Tokyo Electron Limited

Barry Clarke

Ian Colgan

Ioan Domsa

David Hurley

Gerhardus Van Der Linde

Mihaela Ioana Popovici

Lars-Ake Ragnarsson

George Eyres

Maciej Burel

Patrick Hughes

Makoto Saito

Mitsuru Yamazaki

Robert Daniel Clark

Gerrit J Leusink

Toru Ishii

Einstein Noel Abarra

Tadashi Enomoto

Dina Triyoso

Toshiji Abe

Noel O'Shaughnessy

Kazuyoshi Sugawara

Pat Hughes

Jattie Van Der Linde

Bartlomiej Burkowicz

The disclosure describes equipment for magnetic annealing of a substrate, the equipment including: an anneal chamber configured to heat and cool a substrate held at a soak location along a first direction in the anneal chamber, the anneal chamber including: a heater, a cooler, and a substrate lifter including a substrate holder, where the substrate holder is configured to support a substrate oriented such that the first direction is perpendicular to a major surface of the substrate; and a magnet assembly configured to establish a homogeneous zone in the anneal chamber, the soak location being within the homogeneous zone, the homogeneous zone including a region of magnetic field.

Magnetic annealing equipment and method

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Semiconductor processing systems with in-situ electrical bias

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor processing system with in-situ electrical bias and methods thereof

An apparatus for magnetic annealing one or more workpieces, and a method of operating the apparatus, are described. The apparatus includes: a workpiece holder configured to support one or more workpieces, wherein the one or more workpieces having at least one substantially planar surface; an optional workpiece heating system configured to elevate the one or more workpieces to an anneal temperature; and a magnet assembly having a first magnet and a second magnet, the first and second magnets defining a gap between opposing poles of each magnet, wherein the magnet assembly is arranged to generate a magnetic field substantially perpendicular to the planar surface of the one or more workpieces.

Workpiece magnetizing system and method of operating

Disclosed is a magnetic annealing apparatus including a processing container having a horizontally-elongated tubular shape and configured to perform a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a heating unit provided to cover at least a part of a surface of the processing container that extends in a longitudinal direction, from outside; a magnet provided to cover the heating unit from the outside of the heating unit; a substrate holder configured to hold the plurality of substrates within the processing container; and a heat shielding plate provided to surround a part of the substrate holder.

Magnetic annealing apparatus

Disclosed is a magnetic annealing apparatus including a processing container that performs a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a substrate holder that holds the plurality of substrates substantially horizontally in the processing container; a division heater including a plurality of sub-division heaters and covering a substantially entire circumferential surface of an outer periphery of a predetermined region of the processing container along a longitudinal direction; a magnet installed to cover an outside of the division heater; and a controller configured to feedback-control a temperature of a predetermined control target heater among the plurality of sub-division heaters, and to control temperatures of the plurality of sub-division heaters other than the predetermined control target heater based on a control output obtained by multiplying a control output of the predetermined control target heater and a predetermined ratio.

Magnetic annealing apparatus and magnetic annealing method

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Dublin, Ireland

Barry Clarke