Gelest, Inc.

Gelest Technologies, Inc.

Petrarch Systems

The State University of New York

Other

Huls America Inc.

University of Pennsylvania

Varian, Inc.

Beatrice Foods Co.

Gelest Technology, Inc.

Research Foundation of Suny - New York

Kalark Nanostructure Sciences Inc.

Barry C Arkles

Youlin Pan

Alain E Kaloyeros

Jonathan D Goff

Gerald L Larson

Fernando Jove

Jane C Hollenberg

William R Peterson, Jr

Benigno A Janeiro

Rudolph Cameron

Donald H Berry

Ferdinand Gonzaga

Taewoo Min

Richard J Liberatore

Kerry Campbell Demella

Edward Kimble

Robert A Smith

Ana R Londergan

Li Yang

William S Brinigar

David R Nau

George A Timberlake, Jr

Kevin M King

Burrell N Hamon

Alison Anne Phillips

Tatyana Abel-Roberman

Jeffrey S Arkles

Kevin Gan

Hong Zhou

Guicheng Sheng

Lisa Kiernan Figge

Alison Ane Phillips

Yun Mi Kim

Stephen Gerakaris

Joseph M Rokowski

Thin film deposition procedures and systems are provided that consist of hybrid growth processes or integrated physical-chemical deposition processes that combine and unite the advantages of physical (i.e., sputtering) and chemical (i.e., CVD, ALD, MLD, SAM, and/or Click) deposition processes, while minimizing or eliminating their individual shortcomings and challenges. These methods and techniques therefore provide a common and shared processing platform that employs both chemical and physical reactions simultaneously or sequentially to grow high quality conformal thin films with programmable composition and controlled properties.

Methods and systems for producing conformal thin films

A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

Silicon carbide thin films and vapor deposition methods thereof

Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Silicon-based thin films from N-alkyl substituted perhydridocyclotrisilazanes

Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Compositions and methods for reshaping keratin-rich substrates and forming adherent flexible films

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Chalcogenosilacyclopentanes

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom

Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si&#x2014;O&#x2014;Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.

Silicon-based tetrahydrocannabinol derivatives and compositions thereof

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Process for thin film deposition through controlled formation of vapor phase transient species

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD. 

Large ring silacrown ethers having at least fourteen ring atoms with at least one lipophilic or hydrophobic substituent on the ring and/or on the silicon atom are provided. Pharmaceutical compositions containing these silacrown ethers and the use of these materials as therapeutic agents are also described.

Silacrown ethers, pharmaceutical compositions thereof, and therapeutic applications thereof

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200&#xb0; C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Ris a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:(RCH)SnX&#x2003;&#x2003;(I).

Method and precursors for producing oxostannate rich films

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): in which R is a substituted or unsubstituted organic group and R' is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles, hydridosilaazapyrroles, method for preparation thereof, and reaction products therefrom

Growing community of inventors

Pipersville, PA, United States of America

Barry C Arkles