National University of Singapore

New York University

Barbaros Özyilmaz

Andrew David Kent

Antonio Helio Castro Neto

Chee Tat Toh

Guang Xin Ni

Yi Zheng

Jonghak Lee

Henrik Andersen

Sascha Pierre Heussler

Orhan Kahya

Eeshan Sandeep Kulkarni

Enrique Gonzalez Garcia

Iñigo Martin Fernandez

Guang-Xin Ni

A method of making an ordered graphene structure includes exposing a substrate to a laser beam to locally melt a portion of the substrate, exposing the substrate to a laser beam in the presence of a carbon source, to form a nucleation site for a graphene crystal, and either a) moving either the substrate or the laser beam relative to the other, or b) decreasing the laser beam power, in order to increase the size of the graphene crystal, thereby forming an ordered graphene structure. The ordered structure can be a plurality of columns, hexagons, or quadrilaterals. Each ordered structure can have a single crystal of graphene. A polymer coating can be formed on the ordered graphene structure to form a coated graphene structure.

Ordered growth of large crystal graphene by laser-based localized heating for high throughput production

In accordance with a version of the invention, graphene with a ferroelectric material is used as the transparent electrode material in an electrochromic device. The use of curved and dynamically flexing substrates enables flexible and stretchable applications for electrochromic films. Furthermore, the nonreactive and impermeable nature of graphene increases the durability of the device through increased resistance to external impurities. In addition, the incorporation of ferroelectric materials allows the device to exhibit nonvolatile usage; that is, devices can remain transparent with no external power source. Furthermore, devices may exhibit a charging effect, permitting recovery of energy stored in alignment of ferroelectric dipoles within the ferroelectric material.

Electrochromic device with graphene/ferroelectric electrode

A version of the invention comprises a device for controlling or interfacing with a computer or other form of communicable machine based on the pyroelectric effect, and includes at least one optically- and infrared- (IR-) transparent graphene electrode.

Human-machine interface with graphene-pyroelectric materials

A method of making an ordered crystalline product includes hot pressing amorphous carbon at an elevated temperature and pressure to form an ordered crystalline product.

Hot press induced formation of an ordered graphene and few layered graphene sheets

The invention relates to a novel type of gate-tunable photonics and plasmonics which utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultra-fast, low power consumption and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices and ultrasensitive detectors.

Gate-tunable graphene-ferroelectric hybrid structure for photonics and plasmonics

A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.

Transparent conductor

The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.

Electronic devices based on current induced magnetization dynamics in single magnetic layers

The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.

Growing community of inventors

Singapore, Singapore

Barbaros Özyilmaz